Coherent linking of periodic nano-ripples on a ZnO crystal surface induced by femtosecond laser pulses

We demonstrate the coherent linking of periodic nano-ripples formed on the surface of ZnO crystals induced by femtosecond laser pulses. By adjusting the distance between two laser scanning zones, the periodic nano-ripples induced by two separated laser writing processes can be coherently linked and the ZnO nanograting with much longer grooves is therefore produced. The length limitation of this kind of nanograting previously set by the laser focus size is thus overcome. The micro-Raman mapping technique is used to evaluate the quality of coherent linking, and the underlying physics is discussed. The demonstrated scheme is promising for producing large-size self-organized nanogratings induced by femtosecond laser pulses.

Liquid phase epitaxy of Al0.3Ga0.7As islands

Self-organized Al0.3Ga0.7As islands generated on the (100) facet are achieved by liquid phase epitaxy. Three particularly designed experimental conditions-partial oxidation, deficient solute and air quenching-result in defect-free nucleation. Micron-sized frustums and pyramids are observed by a scanning electron microscope. The sharp end of the tip has a radius of curvature less than 50 nm. It is proposed that such Al0.3Ga0.7As islands may be potentially serviceable in microscale and nanoscale fabrication and related spheres. (C) 2004 Elsevier B.V. All rights reserved.

Effect of In0.2Ga0.8As and In0.2Al0.8As combination layer on band offsets of InAs quantum dots

We demonstrate the self-organized InAs quantum dots capped with thin and In0.2Al0.8As and In0.2Ga0.8As combination layers with a large ground and first excited energy separation emission at 1.35 mum at room temperature. Deep level transient spectroscopy is used to obtain quantitative information on emission activation energies and capture barriers for electrons and holes. For this system, the emission activation energies are larger than those for InAs/GaAs quantum dots. With the properties of wide energy separation and deep emission activation energies, self-organized InAs quantum dots capped with In0.2Al0.8As and In0.2Ga0.8As combination layers are one of the promising epitaxial structures of 1.3 mum quantum dot devices. (C) 2004 American Institute of Physics.

Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix

The authors report the self-organized growth of InAs/InAlAs quantum wires on nominal (001) InP substrate and (001) InP substrates misoriented by 2 degrees, 4 degrees, and 8 degrees towards both [-110] and [110]. The influence of substrate misorientation on the structural and optical properties of these InAs/InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared with that grown on nominal (001) InP substrate, the density of InAs/InAlAs quantum wires grown on misoriented InP(001) substrates is enhanced. A strong lateral composition modulation effect take place in the InAlAs buffer layers grown on misoriented InP substrates with large off-cut angles (4 degrees and 8 degrees), which induces a nucleation template for the first-period InAs quantum wires and greatly improve the size distribution of InAs quantum wires. InAs/InAlAs quantum wires grown on InP (001) substrate 8 degrees off cut towards [-110] show the best size homogeneity and photoluminescence intensity. (c) 2007 American Institute of Physics.

The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method

Multi-sheet InGaN/GaN quantum dots (QDs) were grown successfully by surface passivation processing and low-temperature growth in metalorganic chemical vapor deposition. This method based on the principle of increasing the energy barrier of adatom hopping by surface passivation and low-temperature growth, is quite different from present methods. The InGaN quantum dots in the first layer of about 40-nm-wide and 15-nm-high grown by this method were revealed by atomic force microscopy. The InGaN QDs in upper layer grew bigger. To our knowledge, the current-voltage characteristics of multi-sheet InGaN/GaN QDs were measured for the fist time. Two kinds of resonance-tunneling-current features were observed which were attributed to the low-dimensional localization effect. Some current peaks only appeared in positive voltage for sample due to the non-uniformity of the QDs in the structure. (C) 2002 Elsevier Science B.V. All rights reserved.

The influence of growth interruption on quantum dot laser

Growth interruption was introduced during the growth of GaAs capping layer of self-organized quantum dots. The comparison of two QD lasers with and without growth interruption in their active regions shows that growth interruption leads to lower threshold current, higher characteristic temperature, and weaker temperature dependence of lasing energy.

Photoluminescence of InAs quantum dots grown on GaAs surface

InAs quantum dots (QDs) grown on GaAs surface are investigated. The observed abnormal photoluminescence (PL) properties, including extremely sharp high-energy peaks, almost temperature-independent linewidth, and fast thermal quenching, are discussed in terms of the strong quantum confinement effects due to the absence of a cap layer and the lack of carrier redistribution channel caused by the small number of QDs capable of contributing to PL and the high-density surface defects. (C) 2000 American Institute of Physics. [S0003-6951(00)01244-4].

In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates

Self-assembled InxGa1-xAs quantum dots (QDs) on (311)A/B GaAs surfaces have been grown by molecular beam epitaxy (MBE). Spontaneously ordering alignment of InxGa1-xAs with lower In content around 0.3 have been observed. The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the (311)B surface, and is strongly dependent upon the In content x. The ordering alignment become significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on (100) or (311)A substrates. (C) 1999 Elsevier Science B.V. All rights reserved.

Modification of InAs quantum dot structure by the growth of the capping layer

InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications. (C) 1998 American Institute of Physics.

固体表面的分子组装体和纳米结构

本文评叙了分子组装体和纳米结构在固体表面的自组装及其应用，并对控制其自组装过程中的分子间作用力和表面力进行了介绍．采用扫描探针显微学结合电化学的方法对自组装膜（SAMs）、仿生膜（biomimetic mebane），金属和聚合物纳米颗粒（nanoparticles）等分子组装体系进行了研究。主要结果如下：(l)我们研究了2-巯基，-3-烷基唾吩（MOT）在金电极表面的自组装行为。测量了MOT膜的电容，结果表面MOT膜能够选择性的透过溶液中的探针物种。交流阻抗和欠电位沉积研究表明湘T膜的覆盖度达99.9%以上。在硫酸溶液中评价了MOT膜的稳定性，MOT膜的电位窗阳极极限为1.2V。次外，我们还研究了一系列有机小分子在MOT膜上的通透行为，实验结果显示于MOT膜的选择性透过能力最密切相关的是探针分子的溶剂化程度，溶剂化程度约高通过能力越差。我们进一步研究呢MOT膜与表面活性剂的相互作用，发现表面活性剂分子能够在MOT膜表面强烈的吸附，并使MOT膜对电极的封闭作用大大地增强。（2）我们在基于MOT的单组分和电活性多组分的自组膜上进一步构筑了杂化:仿生双层膜，并且研究了双层膜的形成对其中电活性物质的氧化还原反应热力学的影响。跟踪了该双层的形成动力学并研究了其界面属性。得到交叉构象的双层膜．研究了重组其中的HRP的电活性以及磷脂酶A2对该膜的水解动力学。证明我们得到的双层膜比基于烷基硫醇的双层膜有更好的稳定性，而且在仿生膜基础研究和生物传感器应用的有很好的应用前景。（3）我们在MOT和C10SH自组膜上利用表面力，憎水力和电泳力协同作用组装了电活性金纳米粒子。用伏安法跟踪了纳米粒子在界面成膜的过程。用扫描探针显微术对表面得到的纳米结构经行了研究。结果表面这些弱相互作用力协同作用可形成二维纳米结构的表面。(4)我们在单晶Au（111）表面制备了分子导线和长链烷基硫醇的混合自组装膜。以该自组装膜为模板，我们在其表面选择性的生长了聚苯胺纳米结构，这些纳米结构可以作为为阵列电极，而且具有开关特性；同时这些结构为研究分子导线的导电性质提供了一个理想平台。

Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots

Within the framework of the single-band effective-mass envelope-function theory, the effect of electric field on the electronic structures of pyramidal quantum dot is investigated. Taking the Coulomb interaction between the heavy holes and electron into account, the quantum confined Stark shift of the exciton as functions of the strength and direction of applied electric field and the size of the quantum dot are obtained. An interesting asymmetry of Stark shifts around the zero field is found. (C) 1997 Elsevier Science Ltd.

Effective-mass theory for InAs/GaAs strained coupled quantum dots

In the framework of effective-mass envelope-function theory, the optical transitions of InAs/GaAs strained coupled quantum dots grown on GaAs (100) oriented substrates are studied. At the Gamma point, the electron and hole energy levels, the distribution of electron and hole wave functions along the growth and parallel directions, the optical transition-matrix elements, the exciton states, and absorption spectra are calculated. In calculations, the effects due to the different effective masses of electrons and holes in different materials are included. Our theoretical results are in good agreement with the available experimental data.

Single Layer Growth of Strained Epitaxy at Low Temperature

Contacting mode atomic force microscopy (AFM) is used to measure the In0.asGao.65As/GaAs epilayer grown at low temperature (460°C). Unlike the normal layer-by-layer growth (FvdM mode) or self-organized islands growth (SK mode) ,samples grown under 460 C are found to be large islands with atomic thick terraces. AFM measurements reveale near one monolayer high steps. This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.

Optical characterization of the Ge/Si (001) islands in multilayer structure

We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

A one-pot procedure to prepare S-protected 4-iodothiophenols

By means of non-aqueous reduction of pipsyl chloride followed by treatment with K2CO3 and then reacting with acetyl chloride or benzyl chloride, S-acetyl/benzyl -4-iodothiophenols were obtained in a one-pot procedure with yield as high as 90%. These S-protected arenethiols are very important intermediates to synthesize self-assembled molecular wires.