Liquid phase epitaxy of Al0.3Ga0.7As islands


Autoria(s): Sun, J; Hu, LZ; Sun, YC; Wang, ZY; Zhang, HZ
Data(s)

2004

Resumo

Self-organized Al0.3Ga0.7As islands generated on the (100) facet are achieved by liquid phase epitaxy. Three particularly designed experimental conditions-partial oxidation, deficient solute and air quenching-result in defect-free nucleation. Micron-sized frustums and pyramids are observed by a scanning electron microscope. The sharp end of the tip has a radius of curvature less than 50 nm. It is proposed that such Al0.3Ga0.7As islands may be potentially serviceable in microscale and nanoscale fabrication and related spheres. (C) 2004 Elsevier B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/7956

http://www.irgrid.ac.cn/handle/1471x/63572

Idioma(s)

英语

Fonte

Sun, J; Hu, LZ; Sun, YC; Wang, ZY; Zhang, HZ .Liquid phase epitaxy of Al0.3Ga0.7As islands ,JOURNAL OF CRYSTAL GROWTH,SEP 15 2004,270 (1-2):38-41

Palavras-Chave #半导体材料 #crystal morphology
Tipo

期刊论文