The influence of growth interruption on quantum dot laser
Data(s) |
2000
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Resumo |
Growth interruption was introduced during the growth of GaAs capping layer of self-organized quantum dots. The comparison of two QD lasers with and without growth interruption in their active regions shows that growth interruption leads to lower threshold current, higher characteristic temperature, and weaker temperature dependence of lasing energy. |
Identificador | |
Idioma(s) |
中文 |
Fonte |
Wang H; Wang HL; Wang XD; Niu ZC; Feng SL .The influence of growth interruption on quantum dot laser ,JOURNAL OF INFRARED AND MILLIMETER WAVES,2000,19(5):347-350 |
Palavras-Chave | #光电子学 #self-organized InAs quantum dots #quantum dots laser #growth interruption #band-filling |
Tipo |
期刊论文 |