Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 degrees C for 5 min in an O-2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity.

中浓度P���掺杂透射式砷化镓光阴极材料及其制备方法

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高光电转换效率的P-N结硅光电二极管

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磁性p-n结薄膜材料及制备方法

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高P���载流子浓度的氮化镓基化合物薄膜的生长方法

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应变调制掺杂法制备P���氧化锌半导体薄膜材料的方法

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n+/p���GaAs太阳电池表面高透射率窗口层的制备方法

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具有布拉格反射器的n+/p���高抗辐照GaAs太阳电池

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Mg-Sb共掺杂p���ZnO薄膜的制备方法

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P���氮化镓电极的制备方法

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δ掺杂制备P���氧化锌薄膜的方法

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GaN基功率型LED的P���N双透明接触电极及制备方法

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可调谐光纤F-P���滤波器

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利用p���掺杂的硅衬底生长高结晶质量氧化锌纳米棒的方法

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