高P型载流子浓度的氮化镓基化合物薄膜的生长方法
| Data(s) |
04/09/2002
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:38Z (GMT). No. of bitstreams: 1 full/01100889.pdf: 375732 bytes, checksum: 6432ec0e30dc91191dd53b0159ed17a0 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
韩培德;陈振,高P型载流子浓度的氮化镓基化合物薄膜的生长方法 ,CN01100889.X,20010120 |
| Tipo |
专利 |
