GaN基功率型LED的P、N双透明接触电极及制备方法
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15/10/2008
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:29Z (GMT). No. of bitstreams: 1 full/CN200710065320.5.pdf: 508117 bytes, checksum: aab6ffb9245de4ac6337f80d843cbbea (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
王立彬;王良臣,GaN基功率型LED的P、N双透明接触电极及制备方法,CN200710065320.5,20070411 |
| Tipo |
专利 |
