中浓度P型掺杂透射式砷化镓光阴极材料及其制备方法


Autoria(s): 王晓峰; 曾一平
Data(s)

29/06/2005

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/2791

http://www.irgrid.ac.cn/handle/1471x/60877

Idioma(s)

中文

Fonte

王晓峰;曾一平,中浓度P型掺杂透射式砷化镓光阴极材料及其制备方法 ,CN200310121794.9,20031224

Tipo

专利