应变调制掺杂法制备P型氧化锌半导体薄膜材料的方法


Autoria(s): 刘祥林; 赵凤瑗; 焦春美; 于英仪
Data(s)

31/05/2006

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Identificador

http://ir.semi.ac.cn/handle/172111/3499

http://www.irgrid.ac.cn/handle/1471x/61231

Idioma(s)

中文

Fonte

刘祥林;赵凤瑗;焦春美;于英仪,应变调制掺杂法制备P型氧化锌半导体薄膜材料的方法,200410009856,20041125

Tipo

专利