不同发光波长的GaAs 基In(Ga)As 量子点的材料生长和性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

半金属zb-CrAs 和稀磁半导体(Ga,Cr)As 薄膜分子束外延生长和磁性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

In(Ga)As 量子点材料生长及激光器稳态和瞬态特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

稀磁半导体(Ga, Mn)As磁光性质的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si 共掺杂和高温退火对(Ga,Mn)As 结构和磁性质的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

稀磁半导体(Ga,Mn)As和铁磁金属-半导体异质结Fe/GaAs铁磁相变过程的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

In(Ga)N/GaN异质外延纳米结构的生长以及表征

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Fe 和(Ga,Cr)As 薄膜的分子束外延生长及磁学性质

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28T14:23:05Z No. of bitstreams: 1 鲁军_博士论文.pdf: 4237580 bytes, checksum: 3a1a5f0ea10b0895d92e102e4cdcf5d0 (MD5)

稀磁半导体（Ga,Mn)As 的超快磁光谱研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T02:59:47Z No. of bitstreams: 1 博士学位论文 － 朱永刚.pdf: 3575099 bytes, checksum: cb8ced7665a0624ff54bbfafa2be9c35 (MD5)

稀磁半导体(Ga,Mn)As 中自旋动力学的探索与研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-02T05:55:53Z No. of bitstreams: 1 罗晶：稀磁半导体 (Ga,Mn)As中自旋动力学的探索与研究.pdf: 2131823 bytes, checksum: 74e83e69fc6f6b1c7247db0e1c2a8e51 (MD5)

STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS

The properties of electron states in the presence of microwave irradiation play a key role in understanding the oscillations of longitudinal resistance and the zero-resistance states in a high-mobility two-dimensional electron gas(2DEG) in low magnetic field. The properties of electron states in a high-mobility and low-density GaAs/Al0.35Ga0.65As 2DEG in the presence of Ka-band microwave irradiation were studied by reflectance-based optically detected cyclotron resonance(RODCR). The influences of the direction of microwave alternating electronic field, wavelength of the laser, and temperature on RODCR results were discussed. The results show that RODCR measurements provide a convenient and powerful method for studying electron states in 2DEG.

Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.

Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films

We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zeners pd model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors.

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.