Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning
| Data(s) |
2010
|
|---|---|
| Resumo |
We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07T12:54:29Z No. of bitstreams: 1 Domain wall resistance in perpendicular (Ga,Mn) As Dependence on pinning.pdf: 305989 bytes, checksum: 50a02f8a13016815301735b2c51add76 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07T13:10:59Z (GMT) No. of bitstreams: 1 Domain wall resistance in perpendicular (Ga,Mn) As Dependence on pinning.pdf: 305989 bytes, checksum: 50a02f8a13016815301735b2c51add76 (MD5) Made available in DSpace on 2010-09-07T13:10:59Z (GMT). No. of bitstreams: 1 Domain wall resistance in perpendicular (Ga,Mn) As Dependence on pinning.pdf: 305989 bytes, checksum: 50a02f8a13016815301735b2c51add76 (MD5) Previous issue date: 2010 国际 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wang KY (Wang K. Y.), Edmonds KW (Edmonds K. W.), Irvine AC (Irvine A. C.), Wunderlich J (Wunderlich J.), Olejnik K (Olejnik K.), Rushforth AW (Rushforth A. W.), Campion RP (Campion R. P.), Williams DA (Williams D. A.), Foxon CT (Foxon C. T.), Gallagher BL (Gallagher B. L.).Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2010,322(21):3481-3484 |
| Palavras-Chave | #半导体物理 #Domain wall resistance #Pinning #Dependence |
| Tipo |
期刊论文 |
