In(Ga)N/GaN异质外延纳米结构的生长以及表征


Autoria(s): 孙苋
Contribuinte(s)

杨辉

Data(s)

2009

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-09-10T06:08:23Z (GMT). No. of bitstreams: 1 disk/eh2009/sunxian.pdf: 5619555 bytes, checksum: 59f15a912fc7c8f8900df7f152699556 (MD5) Previous issue date: 2009

Identificador

http://ir.semi.ac.cn/handle/172111/6164

http://www.irgrid.ac.cn/handle/1471x/60642

Idioma(s)

中文

Fonte

孙苋.In(Ga)N/GaN异质外延纳米结构的生长以及表征.[博士].北京.中国科学院半导体研究所.2009

Palavras-Chave #微电子学与固体电子学
Tipo

学位论文