STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS


Autoria(s): Yang W (Yang Wei); Luo HH (Luo Hai-Hui); Qian X (Qian Xuan); Ji Y (Ji Yang)
Data(s)

2010

Resumo

The properties of electron states in the presence of microwave irradiation play a key role in understanding the oscillations of longitudinal resistance and the zero-resistance states in a high-mobility two-dimensional electron gas(2DEG) in low magnetic field. The properties of electron states in a high-mobility and low-density GaAs/Al0.35Ga0.65As 2DEG in the presence of Ka-band microwave irradiation were studied by reflectance-based optically detected cyclotron resonance(RODCR). The influences of the direction of microwave alternating electronic field, wavelength of the laser, and temperature on RODCR results were discussed. The results show that RODCR measurements provide a convenient and powerful method for studying electron states in 2DEG.

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其它

Identificador

http://ir.semi.ac.cn/handle/172111/11231

http://www.irgrid.ac.cn/handle/1471x/60751

Idioma(s)

中文

Fonte

Yang W (Yang Wei), Luo HH (Luo Hai-Hui), Qian X (Qian Xuan), Ji Y (Ji Yang).STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS.JOURNAL OF INFRARED AND MILLIMETER WAVES,2010,29(2):87-

Palavras-Chave #半导体物理 #microwave #reflectance #two-dimensional electron gas(2DEG) #cyclotron resonance #QUANTUM-WELLS #GAAS/ALGAAS HETEROSTRUCTURES #GERMANIUM #SILICON
Tipo

期刊论文