Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films


Autoria(s): Chen L (Chen L.); Yan S (Yan S.); Xu PF (Xu P. F.); Lu J (Lu J.); Deng JJ (Deng J. J.); Ji Y (Ji Y.); Wang KY (Wang K. Y.); Zhao JH (Zhao J. H.)
Data(s)

2010

Resumo

We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zeners pd model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors.

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其它

Identificador

http://ir.semi.ac.cn/handle/172111/13523

http://www.irgrid.ac.cn/handle/1471x/60801

Idioma(s)

英语

Fonte

Chen L (Chen L.), Yan S (Yan S.), Xu PF (Xu P. F.), Lu J (Lu J.), Deng JJ (Deng J. J.), Ji Y (Ji Y.), Wang KY (Wang K. Y.), Zhao JH (Zhao J. H.).Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2010,322(21):3250-3254

Palavras-Chave #半导体物理 #Magnetic semiconductor #Magnetic anisotropy #Magneto-transport phenomenon #Molecular-beam epitaxy
Tipo

期刊论文