用不同的Mo靶溅射功率制备Mo／Si多层膜

用磁控溅射法制备了周期厚度和周期数均相同的Mo／Si多层膜，用原子力显微镜和小角X射线衍射分别研究了Mo靶溅射功率不相同时，Mo／Si多层膜表面形貌和晶相的变化。随后在国家同步辐射实验室测量了Mo／Si多层膜的软X射线反射率。研究发现，随着Mo靶溅射功率的增大，Mo／Si多层膜的表面粗糙度增加，Mo的特征X射线衍射峰也增强，Mo／Si多层膜的软X射线峰值反射率先增大后减小。

Mo／Si软X射线多层膜的界面粗糙度研究

用磁控溅射法分别制备了以Mo膜层和Si膜层为顶层的Mo／Si多层膜系列，利用小角X射线衍射确定了各多层膜的周期厚度。以不同周期数的Mo／Si多层膜的新鲜表面近似等同于同一多层膜的内界面，通过原子力显微镜研究了多层膜界面粗糙度随膜层数的变化规律。并在国家同步辐射实验室测量了各多层膜的软X射线反射率。研究表明：随着膜层数的增加，Mo膜层和Si膜层的界面粗糙度先减小后增加然后再减小，多层膜的峰值反射率先增加后减小。

Laser-induced damage of Ti O2 Si O2 high reflector at 1064 nm

A high laser-induced damage threshold (LIDT) TiO2/SiO2 high reflector (HR) at 1064 nm is deposited by e-beam evaporation. The HR is characterized by optical properties, surface, and cross section structure. LIDT is tested at 1064 nm with a 12 ns laser pulse in the one-on-one mode. Raman technique and scanning electron Microscope are used to analyze the laser-induced modification of HR. The possible damage mechanism is discussed. It is found that the LIDT of HR is influenced by the nanometer precursor in the surface, the intrinsic absorption of film material, the compactness of the cross section and surface structure, and the homogeneity of TiO2 layer. Three typical damage morphologies such as flat-bottom pit, delamination, and plasma scald determine well the nanometer defect initiation mechanism. The laser-induced crystallization consists well with the thermal damage nature of HR. (C) 2008 American Institute of Physics.

GexSi1-x/Si应变层超晶格及其相关材料的分子束外延生长和特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si-GaAs的电学补偿机理及微区均匀性对电子迁移率的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si-GaAs中El2的光淬灭效应及有关深能级行为的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

a-Si:H光致变化效应的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si-GaAs注入退火特性的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

a-Si:H的P+/i/n+结构器件

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

a-Si:H/a-C:H超晶格的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si基量子阱材料1.3微米波长光电探测器的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GexSi1-x/Si异质结构中的缺陷研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

3C-SiC/Si材料的生长及其质量表征方法的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

金属薄膜与半导体的反应——Co-Si多层膜，LREM硅化物薄膜，TiN/n-GaAs体系

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z