Photovoltaic effect of cubic GaN/GaAs(100)

We have studied the photovoltaic effect in cubic GaN on GaAs at room temperature. The photovoltaic spectra of cubic GaN epitaxial film were concealed by the photovoltaic effect from the GaAs substrate unless additional illumination of a 632.8 nm He-Ne laser beam was used to remove the interference of the GaAs absorption in the measurement. On the basis of the near-band-edge photovoltaic spectra of cubic GaN, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 mu m for two undoped n-type cubic GaN samples with background concentrations of 10(14) and 10(18) cm(-3), respectively. (C) 1999 American Institute of Physics. [S0003-6951(99)00450-7].

Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)

The effect of Si overgrowth on the structural and luminescence properties of strained Ge layer grown on Si(1 0 0) is studied. Capping Si leads to the dissolution of Ge island apex and reduced island height. The structural changes in island shape, especially in chemical composition during Si overgrowth have a large effect on the PL properties. The integrated PL intensity of Ge layer increases and there are large blue shifts in peak energies after capping Si. The PL spectra from buried Ge layer are consistent with type-II band alignment in SiGe/Si. We show that the PL properties from buried Ge layer may be tailored by modifying the cap layer growth conditions as well as post-growth annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Effect of Si doping on cubic GaN films grown on GaAs(100)

Epitaxial layers of cubic GaN have been grown by metalorganic vapor-phase epitaxy (MOVPE) with Si-doping carrier concentration ranging from 3 x 10(18) to 2.4 x 10(20)/cm(3). Si-doping decreased the yellow emission of GaN. However, the heavily doped n-type material has been found to induce phase transformation. As the Si-doping concentration increases, the hexagonal GaN nanoparticles increase. Judged from the linewidth of X-ray rocking curve, Si-doping increases the density of dislocations and stacking faults. Based on these observations, a model is proposed to interpret the phase transformation induced by the generated microdefects, such as dislocations and precipitates, and induced stacking faults under heavy Si-doping. (C) 1999 Elsevier Science B.V. All rights reserved.

Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy

In this paper, InGaAs quantum dots with an adjusting InGaAlAs layer underneath are grown on (n 1 1)A/B (n = 2-5) and the reference (1 0 0) substrates by molecular beam epitaxy. Small and dense InGaAs quantum dots are formed on (1 0 0) and (n 1 1)B substrates. A comparative study by atomic force microscopy shows that the alignment and uniformity for InGaAs quantum dots are greatly improved on(5 1 1)B but deteriorated on (3 1 1)B surface, demonstrating the great influence of the buried InGaAlAs layer. There is an increase in photoluminescence intensity and a decrease in the full-width at half-maximum when n varies from 2 to 5. Quantum dots formed on (3 1 1)A and (5 1 1)A surfaces are large and random in distribution, and no emission from these dots can be detected. (C) 1999 Elsevier Science B.V. All rights reserved.

High-density InAs nanowires realized in situ on (100) InP

High-density InAs nanowires embedded in an In0.52Al0.48As matrix are fabricated in situ by molecular beam epitaxy on (100) InP. The average cross section of the nanowires is 4.5 x 10 nm(2). The linear density is as high as 70 wires/mu m. The spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. Large polarization anisotropic effect is observed in polarized photoluminescence measurements. (C) 1999 American Institute of Physics. [S0003-6951(99)04134-0].

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Effects of annealing on self-organized InAs quantum islands on GaAs (100)

Self-organized InAs islands on (001) GaAs grown by molecular beam epitaxy were annealed and characterized with photoluminescence (PL) and transmission electron microscopy (TEM). The PL spectra from the InAs islands demonstrated that annealing resulted in a blueshift in peak energy, a reduction in intensity, and a narrower linewidth in the PL peak. In addition, the TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 degrees dislocations. The correlation between the changes in the PL spectra and the relaxation of strain in InAs islands was discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)01850-6].

Gallium diffusion through cubic GaN films grown on GaAs(100) at high-temperature using low-pressure MOVPE

Cubic GaN films were grown on GaAs(1 0 0) substrates by low-pressure metalorganic vapor-phase epitaxy at high temperature. We have found a nonlinear relation between GaN film thickness and growth timer and this nonlinearity becomes more obvious with increasing growth temperature. We assumed it was because of Ga diffusion through the GaN film, and developed a model which agrees well with the experimental results. These results raise questions concerning the role of Ga diffusion through the GaN film, which may affect the electrical and optical properties of the material. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then there is a sudden decrease at 535 degrees C. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

酚酞型聚芳醚砜共聚物与共混物－(PP/BiS-T) PES共聚物和(PPS/PES-C)���(PPO/PES-C)���混物的合成、结构与性能研究

本工作旨在通过共聚、共混技术制备酚酞型聚芳醚砜共聚物(PP/BiS-T) PES和共混物(PPS/PES-C)���PPO/PES-C��以便改善酚酞型聚芳醚砜（PES－C��的加工性能（特别是注射加工性能）和耐溶剂性能。通过研究共聚物和共混物的微观结构，聚集态结构与性能的关系，探索改善酚酞型聚芳醚硕性能的有效途径第一部分：(PP/BiS-T) PES共聚物的合成、结构与性能(PP/BiS-T) PES共聚物是以4，4'二氯二苯砜（DCDPS）、酚酞（PP）和4，4'－二羟基二苯硫醚(BiS-T)为单体，采用固体无水K_2CO_3/NMP/TMSO_2 混合溶剂反应体系合成的。共聚反应规律研究表明：在NMP/TMSO_2混合溶剂中，共聚反应可以顺利进行，避免了交联反应的发生，并成功地合成了高分子量的(PP/BiS-T) PES共聚物。DSC��析结果表明(PP/BiS-T) PES系列属于无定形的均相共聚物体系，每一组成比例对应的共聚物只具有一个玻璃化转变温度。且随组成比例的改变呈线性变化，TBA���析结果与DSC��本一致，并证实了(PP/BiS-T) PES属于均相共聚物体系，而不是均聚物的共混物。TG分析表明：共聚物具有良好的耐热氧化稳定性BiS-T链节在分子链中起到了提高自身抗氧性的作用。1R光谱对共聚物的结构进行表征。~(13)C-NMR分析确认共聚物多属于无规共聚物。动态力学试验表明共聚物(PP/BiS-T) PES以及PES－C��在－100 ℃附近和0－100 ℃，存在着次级松驰与转变，并发现水分子的存在对这种转变（次级松驰）有一定的影响。共聚物的熔融流动性试验和溶解性试验表明共聚物(PP/BiS-T) PES具有稍好于PES－C��熔融流动性；溶解性与PES－C��似。力学试验说明共聚物属于强而硬类型的聚合物。第二部分：PPS/PES－C��混物的制备、聚集态结构与性能PPS/PES－C��混物是以联苯/二苯硕混合物为溶剂，采用溶液沉析方法制备的，DSC��WAXD，SEM和1R分析手段对共混物的聚集态结构和微观结构进行了表征。DSC��析认为共混物属于多相体系，PPS的结晶性随着PES－C��量增加而降低。DSC��SEM观察结果表明：相转变发生在PPS占40％左右。PPS占25％时，DSC��线呈现出界面相玻璃化转变温度。共混物具有良好的耐热氧化稳定性和耐热分解稳定性。微晶大小计算结果：PES－C��在导致了PPS微晶大小降低。WAXD曲线表明PPS占50％，共混物中的PPS具有较好的结晶性。SEM观察发现：随着PES－C��量增加，PES－C��分散相（PES－C50％）变为连续相（PES－C70％）。PPS占50％或低于50％时，共混物体系不仅发生了微观相分离，而且发生了宏观相分离。M.I.指数表明共混物中PPS为连续相时，共混物具有良好的熔融流动性。溶解性试验结果：共混物具有较好的耐溶剂性。第三部分：PPO/PES－C��混物的合成、结构与性能 PPO/PES－C��混物系用溶液－涂膜法，以氯彷为溶剂制备的。讨论了由同一共混物溶液浓度下制备的共混物的互溶性随组成的改变而变化。DSC��析结果：PPO/PES－C��于部分相溶性体系。利用Fox方程推导式计算结果表明PPO在富PES－C��中具有良好的分散性；而PES－C��富PPO相中的分散性较差。共混物(PPO/PES－C)���样经丙酮浸泡后，PPO（>50％）发生了溶剂诱导结晶现象，同时丙酮促使共混物发生完全相分离。结晶溶化热显示共混物中少量的PES－C��在有利于PPO的溶剂诱导结晶。TG分析表明共混物具有良好的耐热分解稳定性和耐热氧化分解稳定性。偏光显微镜下观察到PPO球晶的存在。SEM和FT－1R分别对共混物的形态结构和微观结构进行了表征。WAXD试验证实了丙酮处理的(PPO/PES－C)���70/30），（90/10）共混物中PPO的结晶性。溶解性试验表明：PPO掺入有助于 PES－C��耐溶剂性提高。

INVESTIGATION OF THE GROWN DIAMOND (100) SURFACE USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

The diamond (100) facets deposited at initial 1.0% CH4 have been investigated using high resolution electron energy loss spectroscopy (HREELS). The diamond (100) facets grown at 800-degrees-C are terminated by CH2 radicals, and there is no detectable frequency shift compared with the characteristic frequencies of molecular subgroup CH2. Beside the CH2 vibration loss, CH bend loss (at 140 meV) of locally monohydrogenated dimer is detected for the diamond (100) facets grown at 1000-degrees-C. Dosing the (100) facets grown at 800-degrees-C with atomic hydrogen at 1*10(-6) mbar, the loss peak at 140 meV appears. It is suggested that there are enough separately vacant sites and uniformly dispersed monohydrogenated dimers on (100) facets. This structure relaxes the steric repulsion between the adjacent hydrogen atoms during the diamond (100) surface growth.

New aspects of K promoted nitridation of the InP(100) surface

The effect of molecular nitrogen exposure on the InP(100) surface modified by the alkali metal K overlayer is investigated by core-level photoemission spectroscopy using synchrotron radiation. The alkali metal covered surface exhibits reasonable nitrogen uptake at room temperature, and results in the formation of a P3N5 nitride complex. Flash annealing at 400 degrees C greatly enhanced the formation of this kind of nitride complex. Above 500 degrees C, the nitride complex dissolved completely. (C) 1997 American Vacuum Society.

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest [110] directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure

Photoluminescence of GaInP epilayers under hydrostatic pressure is investigated. The Gamma valley of disordered GaInP shifts sublinearly upwards with respect to the top of the valence band with increasing pressure and this sublinearity is caused by the nonlinear dependence of lattice constant on the hydrostatic pressure. The Gamma valleys of ordered GaInP epilayers rise slower than that of the disordered one. Considering the interactions between the Gamma valley and folded L and X valleys, the pressure dependence of the band gap of ordered GaInP is calculated and fitted. The results demonstrate that not only ordering along [111] directions but also sometimes simultaneous ordering along [111] and [100] directions can occur in ordered GaInP. (C) 1996 American Institute of Physics.