Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers


Autoria(s): Xu Y (Xu Ying); Hu ZH (Hu Zhihua); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Zeng XB (Zeng Xiangbo); Hao HY (Hao Huiying); Liao XB (Liao Xianbo); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo)
Data(s)

2006

Resumo

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

New Univ Lisbon, Dept Mat Sci, P-2829516 Caparica, Almada, Portugal; New Univ Lisbon, CEMOP, P-2829516 Caparica, Almada, Portugal; New Univ Lisbon, UNINOVA, Fac Sci & Technol, P-2829516 Caparica, Almada, Portugal; Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China; Kunming Inst Phys, Kunming, Yunnan, Peoples R China

Identificador

http://ir.semi.ac.cn/handle/172111/10014

http://www.irgrid.ac.cn/handle/1471x/66008

Idioma(s)

英语

Publicador

ELSEVIER SCIENCE BV

PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS

Fonte

Xu, Y (Xu, Ying); Hu, ZH (Hu, Zhihua); Diao, HW (Diao, Hongwei); Cai, Y (Cai, Yi); Zhang, SB (Zhang, Shibin); Zeng, XB (Zeng, Xiangbo); Hao, HY (Hao, Huiying); Liao, XB (Liao, Xianbo); Fortunato, E (Fortunato, Elvira); Martins, R (Martins, Rodrigo) .Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers .见:ELSEVIER SCIENCE BV .JOURNAL OF NON-CRYSTALLINE SOLIDS,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS , JUN 15 2006,352 (9-20): 1972-1975

Palavras-Chave #半导体材料 #silicon
Tipo

会议论文