Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure


Autoria(s): Dong JR; Wang ZG; Lu DC; Liu XL; Li XB; Sun DZ; Wang ZJ; Kong MY; Li GH
Data(s)

1996

Resumo

Photoluminescence of GaInP epilayers under hydrostatic pressure is investigated. The Gamma valley of disordered GaInP shifts sublinearly upwards with respect to the top of the valence band with increasing pressure and this sublinearity is caused by the nonlinear dependence of lattice constant on the hydrostatic pressure. The Gamma valleys of ordered GaInP epilayers rise slower than that of the disordered one. Considering the interactions between the Gamma valley and folded L and X valleys, the pressure dependence of the band gap of ordered GaInP is calculated and fitted. The results demonstrate that not only ordering along [111] directions but also sometimes simultaneous ordering along [111] and [100] directions can occur in ordered GaInP. (C) 1996 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/15441

http://www.irgrid.ac.cn/handle/1471x/101759

Idioma(s)

英语

Fonte

Dong JR; Wang ZG; Lu DC; Liu XL; Li XB; Sun DZ; Wang ZJ; Kong MY; Li GH .Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure ,APPLIED PHYSICS LETTERS ,1996,68(12):1711-1713

Palavras-Chave #半导体材料 #VAPOR-PHASE EPITAXY #GA0.5IN0.5P #DEPENDENCE #SPECTRUM #ENERGY #GROWTH
Tipo

期刊论文