InAs/InP（0.7）Sb（0.3）热电子晶体管的fT及f（max）

于2010-11-23批量导入

GaAs/Al（0.3）Ga（0.7）As短周期超晶格中负微分电导效应的观察

于2010-11-23批量导入

High-field nonlinear perpendicular transport in a GaAs/Al_(0.3)Ga_(0.7) As short-period superlattice

于2010-11-23批量导入

1MeVSi＋衬底加温注入Al（0.3）Ca（0.7）As/GaAs超晶格和GaAs的晶格损伤研究

用卢瑟福背散射沟道技术研究了1MeVSi~+在衬底加温和室温下以不同剂量注入Al＿(0．3)Ga＿(0．7)As／GaAs超晶格和GaAs后的晶格损伤。在衬底加温下, 观察到Al＿(0．3)Ga＿(0．7)As／GaAs超晶格和GaAs都存在一个动态退火速率与缺陷产生速率相平衡的剂量范围, 以及两种速率失去平衡的临界剂量。用热尖峰与碰撞模型解释了晶格损伤积累与注入剂量和衬底温度的关系。

高迁移率Si/Si（0.7）Ge（0.3）/Si调帛掺杂异质结构的生长和输运性质

863计划,国家攀登计划

GaAs/Ga（0.7）Al（0.3）超晶格中场致激子峰展宽机制的研究

于2010-11-23批量导入

GaAs/Ga（0.7）Al（0.3）As短周期超晶格中的自电光双稳和多稳态效应

国家自然科学基金

Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

Electronic characteristics of InAs self-assembled quantum dots

Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy

The physical properties of low-temperature-deposited GaN buffer layers with different thicknesses grown by metal-organic vapor-phase epitaxy have been studied. A tentative model for the optimum thickness of buffer layer has been proposed. Heavily Si-doped GaN layers have been grown using silane as the dopant. The electron concentration of Si-doped GaN reached 1.7 x 10(20) cm(-3) with mobility 30 cm(2)/V s at room temperature. (C) 1998 Published by Elsevier Science B.V. All rights reserved.