Influence of a tilted cavity on quantum-dot optoelectronic active devices

Quantum-dot laser diodes (QD-LDs) with a Fabry-Perot cavity and quantum-dot semiconductor optical amplifiers (QD-SOAs) with 7° tilted cavity were fabricated. The influence of a tilted cavity on optoelectronic active devices was also investigated. For the QD-LD, high performance was observed at room temperature. The threshold current was below 30 mA and the slope efficiency was 0.36 W/A. In contrast, the threshold current of the QD-SOA approached 1000 mA, which indicated that low facet reflectivity was obtained due to the tilted cavity design.A much more inverted carrier population was found in the QD-SOA active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. Due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the QD-SOA was 81.6 nm at the injection current of 120 mA, which was ideal for broad bandwidth application in a wavelength division multiplexing system. In addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6-8 nm,which is approximately equal to the homogeneous broadening of quantum dots.

Epitaxial growth on 4H-SiC by TCS as a silicon precursor

Epitaxial growth on n-type 4H-SiC 8°off-oriented substrates with a size of 10 × 10 mm~2 at different tem-peratures with various gas flow rates has been performed in a horizontal hot wall CVD reactor, using trichlorosilane (TCS) as a silicon precursor source together with ethylene as a carbon precursor source. The growth rate reached 23 μm/h and the optimal epilayer was obtained at 1600 ℃ with a TCS flow rate of 12 sccm in C/Si of 0.42, which has a good surface morphology with a low RMS of 0.64 nm in an area of 10 × 10μm~2. The homoepitaxial layer was oh-tained at 1500 ℃ with low growth rate (< 5μm/h) and the 3C-SiC epilayers were obtained at 1650 ℃ with a growth rate of 60-70μm/h. It is estimated that the structural properties of the epilayers have a relationship with the growth temperature and growth rate. Silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low C/Si ratio of 0.32.

Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon

Composites consisting of hydrogenated amorphous silicon (a-Si: H, inorganic) and zinc phthalocyanine (ZnPc, organic) were prepared by vacuum evaporation of ZnPc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition (PECVD). The optical and electrical properties of the composite film have been investigated. The results demonstrate that ZnPc can endure the temperature and bombardment of the PECVD plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-Si: H film. Electron mobility-lifetime products μτ of the composite film were increased by nearly one order of magnitude from 6.96 × 10~(-7) to 5.08 × 10~(-6) cm~2/V. Combined with photoconductivity spectra of the composites and pure a-Si: H, we tentatively elucidate the improvement in photoconductivity of the composite film.

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

Boron-doped hydrogenated silicon films with different gaseous doping ratios (B_2H_6/SiH_4) were deposited in a plasma-enhanced chemical vapor deposition (PECVD) system. The microstructure of the films was investigated by atomic force microscopy (AFM) and Raman scattering spectroscopy. The electrical properties of the films were characterized by their room temperature electrical conductivity (σ) and the activation energy (E_a). The results show that with an increasing gaseous doping ratio, the silicon films transfer from a microcrystalline to an amorphous phase, and corresponding changes in the electrical properties were observed. The thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions. The measurements of the Ⅰ-Ⅴ characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04, and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it. The junction with such a recombination layer has a small resistance, a nearly ohmic contact, and a negligible optical absorption.

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

Spin splitting of conduction subbands in Al_(0.3)Ga_(0.7)As/GaAs/Al_xGa_(1-x)As/Al_(0.3)Ga_(0.7)As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference. The dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. Without an external electric field, the spin splitting is induced by an in terface related Rashba term due to the built-in structure inversion asymmetry. Applying the external electric field to the step QW, the Rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the electric field. The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field, and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.

NiO removal of Ni/Au Ohmic contact to p-GaN after annealing

The Ni/Au contact was treated with oxalic acid after annealing in O_2 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth pro-file of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.

Design and performance of a complex-coupled DFB laser with sampled grating

A complex-coupled DFB laser with sampled grating has been designed and fabricated. The method uses the + 1 st order reflection of the sampled grating for laser single-mode operation. The typical threshold current of the sampled grating based DFB laser is 25 mA, and the optical output is about 10 mW at the injected current of 100 mA. The lasing wavelength of the device is 1.5385μm, which is the +1 st order wavelength of the sampled grating.

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator

A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating asimple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic "and" function with differ-ent load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinc-tion ratio of over 7dB with a 950Ω load resistor and a 7mW control light power at 622Mbit/s.

Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd ! YVO, 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7. 5 W, 2. 81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37. 5% , and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.

Analysis of directional emission in square resonator lasers with an output waveguide

Square microcavity laser with an output waveguide is proposed and analyzed by the finite-difference time-domain (FDTD) technique. For a square resonator with refractive index of 3.2, side length of 4 microns, and output waveguide of 0.4-micron width, we have got the quality factors (Q factors) of 6.7×10~2 and 7.3×10~3 for the fundamental and first-order transverse magnetic (TM) mode near the wavelength of 1.5 microns, respectively. The simulated intensity distribution for the first-order TM mode shows that the coupling efficiency in the waveguide reaches 53%. The numerical simulation shows that the first-order transverse modes have fairly high Q factor and high coupling efficiency to the output waveguide. Therefore the square resonator with an output waveguide is a promising candidate to realize single-mode directional emission microcavity lasers.

Ferromagnetic MnSb Films Consisting of Nanorods and Nanoleaves

Ferromagnetic MnSb films were synthesized on Si wafers by physical vapor deposition. X-ray diffraction revealed that the films primarily consisted of MnSb alloy. Nanorods and nanoleaves were observed in the MnSb films by field-emission scanning electron microscopy. These nanorods had an average diameter of 20nm and a length of up to hundreds of nanometers. The nanoleaves had a width and thickness of about 100 and 20nm, respectively. Magnetic hysteresis loops were measured by an alternative gradient magnetometer, and the loops showed strong geometrical anisotropy.

Nonlinear Optical Properties of AI-Doped nc-Si-SiO_2 Composite Films

The nonlinear optical properties of Al-doped nc-Si-SiO_2 composite films have been investigated using the time-resolved four-wave mixing technique with a femtosecond laser. The off-resonant third-order nonlinear susceptibility is observed to be 1.0 × 10~(-10) esu at 800nm. The relaxation time of the optical nonlinearity in the films is as short as 60fs. The optical nonlinearity is enhanced due to the quantum confinement of electrons in Si nanocrystals embedded in the SiO_2 films. The enhanced optical nonlinearity does not originate from Al dopant because there are no Al clusters in the films.

High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals

Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescenee（PL） from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanoerystals was discussed.