Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon


Autoria(s): Zhang Changsha; Zeng Xiangbo; Peng Wenbo; Shi Mingji; Liu Shiyong; Xiao Haibo; Wang Zhanguo; Chen Jun; Wang Shuangqing
Data(s)

2009

Resumo

Composites consisting of hydrogenated amorphous silicon (a-Si: H, inorganic) and zinc phthalocyanine (ZnPc, organic) were prepared by vacuum evaporation of ZnPc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition (PECVD). The optical and electrical properties of the composite film have been investigated. The results demonstrate that ZnPc can endure the temperature and bombardment of the PECVD plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-Si: H film. Electron mobility-lifetime products μτ of the composite film were increased by nearly one order of magnitude from 6.96 × 10~(-7) to 5.08 × 10~(-6) cm~2/V. Combined with photoconductivity spectra of the composites and pure a-Si: H, we tentatively elucidate the improvement in photoconductivity of the composite film.

Composites consisting of hydrogenated amorphous silicon (a-Si: H, inorganic) and zinc phthalocyanine (ZnPc, organic) were prepared by vacuum evaporation of ZnPc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition (PECVD). The optical and electrical properties of the composite film have been investigated. The results demonstrate that ZnPc can endure the temperature and bombardment of the PECVD plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-Si: H film. Electron mobility-lifetime products μτ of the composite film were increased by nearly one order of magnitude from 6.96 × 10~(-7) to 5.08 × 10~(-6) cm~2/V. Combined with photoconductivity spectra of the composites and pure a-Si: H, we tentatively elucidate the improvement in photoconductivity of the composite film.

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the State Key Development Program for Basic Research of China,the National Natural Science Foundation of China,the National High Technology Research and Development Program of China

Institute of Semiconductors,Chinese Academy of Sciences;Institute of Chemistry,Chinese Academy of Sciences

the State Key Development Program for Basic Research of China,the National Natural Science Foundation of China,the National High Technology Research and Development Program of China

Identificador

http://ir.semi.ac.cn/handle/172111/15727

http://www.irgrid.ac.cn/handle/1471x/101902

Idioma(s)

英语

Fonte

Zhang Changsha;Zeng Xiangbo;Peng Wenbo;Shi Mingji;Liu Shiyong;Xiao Haibo;Wang Zhanguo;Chen Jun;Wang Shuangqing.Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon,半导体学报,2009,30(8):39-42

Palavras-Chave #半导体材料
Tipo

期刊论文