High speed silicon optical switches based on carrier depletion - art. no. 67812D

The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3 dB/mu m. The phase shift reaches about 5 x 10(-4) pi/mu m at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.

Unattended ground sensor system based on fiber optic disk accelerometer

The basic principle and critical characteristics of unattended ground sensors (UGS) based on fiber optic disk accelerometers are introduced. Mechanical principles of fiber optic disk accelerometers (FODA) and calculation methods are presented. An FODA with a high sensitivity of 120rad/g and a resonance frequency of 300Hz is designed and used for detection in military affair.

A 12-bit 300 MHz CMOS DAC for high-speed system applications

This paper describes a 12-bit 300 MHz CMOS DAC for high-speed system applications. The proposed DAC consists of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs. In order to ensure the linearity of DAC, a double Centro symmetric current matrix is designed by using the Q(2) random walk strategy. To minimize the feedthrough and improve the dynamic performance, the drain of the switching transistors is isolated from the output lines by adding two cascoded transistors.

On the design and simulation of high speed electro-optic modulator based on SOI waveguide MOS dual capacitor structure

zhangdi于2010-03-29批量导入

High-speed photodetector characterization using tunable laser by optical heterodyne technique - art. no. 60200A

An ultra-wide-band frequency response measurement system for optoelectronic devices has been established using the optical heterodyne method utilizing a tunable laser and a wavelenath-fixed distributed feedback laser. By controlling the laser diode cavity length, the beat frequency is swept from DC to hundreds GHz. An outstanding advantage is that this measurement system does not need any high-speed light modulation source and additional calibration. In this measurement, two types of different O/E receivers have been tested. and 3 dB bandwidths measured by this system were 14.4GHz and 40GHz, respectively. The comparisons between experimental data and that from manufacturer show that this method is accurate and easy to carry out.

An ambient proof and wide tuning range LC VCO with automatic amplitude control for tuner applications

This paper represents a LC VCO with AAC (Auto Amplitude Control), in which PMOS FETs are used as active components, and the varactors are directly connected to ground to widen Kvco linear range. The AAC circuitry adds little noise to the VCO and provides it with robust performance over a wide temperature and carrier frequency range. The VCO is fabricated in 50-GHz 0.35-mu m SiGe BiCMOS process. The measurement results show that it has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole circuit draws 6.6-mA current from 5.0-V supply.

Small-signal and large-signal performance test of high-speed optoelectronics devices

This paper presents measurement methods for determining the reflection coefficients and frequency responses of semiconductor laser diodes, photodiodes, and EA modulator chips. A novel method for determining the intrinsic frequency responses of laser diodes is also proposed, and applications of the developed measurement methods are discussed. We demonstrate the compensation of bonding wire on the capacitances of both the submount and the laser diode, and present a method for estimating the potential modulation bandwidth of TO packaging technique. Initial study on removing the effects of test fixture on large-signal performances of optoelectronic devices at high data rate is also given.

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm(2) only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.

High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature Ge buffer by ultrahigh-vacuum chemical vapor deposition. For a detector of 70-mu m diameter, the 1-dB small-signal compression power was about 110.5 mW. The 3-dB bandwidth at 3-V reverse bias was 13.4 GHz.

Ground state energy of He isoelectronic sequence treated variationally via Hylleraas-like wavefunction

In this study, the energy for the ground state of helium and a few helium-like ions (Z=1-6) is computed variationally by using a Hylleraas-like wavefunction. A four-parameters wavefunction, satisfying boundary conditions for coalescence points, is combined with a Hylleraas-like basis set which explicitly incorporates r12 interelectronic distance. The main contribution of this work is the introduction of modified correlation terms leading to the definition of integral transforms which provide the calculation of expectation value of energy to be done analytically over single-particle coordinates instead of Hylleraas coordinates.

A high speed direct digital frequency synthesizer realized by a segmented nonlinear DAC

This paper presents a high speed ROM-less direct digital frequency synthesizer (DDFS) which has a phase resolution of 32 bits and a magnitude resolution of 10 bits. A 10-bit nonlinear segmented DAC is used in place of the ROM look-up table for phase-to-sine amplitude conversion and the linear DAC in a conventional DDFS.The design procedure for implementing the nonlinear DAC is presented. To ensure high speed, current mode logic (CML) is used. The chip is implemented in Chartered 0.35μm COMS technology with active area of 2.0 × 2.5 mm~2 and total power consumption of 400 mW at a single 3.3 V supply voltage. The maximum operating frequency is 850 MHz at room temperature and 1.0 GHz at 0 ℃.

Recent Progress in Silicon Electro-optic Modulators for High Speed Applications

Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in silicon, reviewed are some recent progresses in high-speed silicon modulators, and analyzed are advantages and shortages of the silicon modulators of different types.