NOVEL SEMICONDUCTOR SUBSTRATE FOR HIGH-SPEED INTEGRATED-CIRCUIT MANUFACTURE

Autoria(s): LI JM
Data(s)

1989
Identificador

http://ir.semi.ac.cn/handle/172111/14461

http://www.irgrid.ac.cn/handle/1471x/101265
Idioma(s)

英语
Fonte

LI JM.NOVEL SEMICONDUCTOR SUBSTRATE FOR HIGH-SPEED INTEGRATED-CIRCUIT MANUFACTURE,ELECTRONICS LETTERS,1989,25(21):1431-1432
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital