High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature Ge buffer by ultrahigh-vacuum chemical vapor deposition. For a detector of 70-mu m diameter, the 1-dB small-signal compression power was about 110.5 mW. The 3-dB bandwidth at 3-V reverse bias was 13.4 GHz.

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This work was supported in part by the Major State Basic Research Development Program of China under Grant 2007CB613404, by the National High-Technology Research and Development Program of China under Grant 2006AA03Z415, and by the National Natural Science Foundation of China under Grant 60676005. The review of this letter was arranged by Editor C. Jagadish

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This work was supported in part by the Major State Basic Research Development Program of China under Grant 2007CB613404, by the National High-Technology Research and Development Program of China under Grant 2006AA03Z415, and by the National Natural Science Foundation of China under Grant 60676005. The review of this letter was arranged by Editor C. Jagadish