Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

基于Lattice Boltzmann模型的液-液混合流模拟

引入了一种二元Lattice Boltzmann Model(LBM),实现了两种液体组成的混合流的模拟.不同于其它的类似模型,它区分考虑了流体的粘性和扩散特性,可以很容易地模拟各种互溶或者不互溶的混合流现象.此外,由于LBM的运算大都是线性的局部运算,这使得它很容易在可编程图形处理器(Graphics Process Unit,GPU)上进行加速,从而进行实时模拟.给出了若干二元混合流的模拟结果.

液体多脉冲及2D NMR实验的计算机模拟

现代多脉冲及2D NMR技术是过去十年中发展起来的崭新的NMR实验方法。计算机模拟做为NMR实验的强有力分析手段已日益受到重视。国内这方面工作开展得尚很少；国外发表的工作主要采用的是数字模拟，存在分析结果不够直观、物理意义不够清晰等缺陷。本论文工作采用乘积算符方法研制出对分析多脉冲及2D NMR实验普适的模拟程序PROPER；在乘积算符基础上，针对磁等性自旋体系，提出了实用的对称化乘积算符及多量子积算符方法。一、多脉冲及2D NMR实验的计算机模拟 1. 采用乘积算符方法在本所PDP－11／23微机上研制了多脉冲及2D NMR实验的模拟程序PROPER。该程序对不超过4核（I ＝ 1／2）的同核及异核弱耦合自旋体系非选择性脉冲序列的分析是普遍适用的。受计算机内存的限制，PROPER程序所能处理的脉冲序列脉冲间隔数目一般不超过10。2. 应用PROPER模拟程序对INEP和DEPT脉冲序列进行了分析比较；特别对BIRD脉冲序列的各种相位变型进行了模拟分析，给出了分析结果，分析过程中考虑了影响BIRD作用效果的同核耦合因素。应用结果表明，PROPER程序计算正确、迅速、给出的模拟结果较通常的数字模拟方法简单、直观、物理意义清楚，便于分析。由于采用算符模拟，结果的输出打印比较费时。目前，PROPER程序正在改进和完善之中。二、多脉冲及2D NMR实验的密度算符描述 1. 针对磁等性自旋（I ＝ 1／2）体系，首次提出了对称化乘积算符描述方法。在通常的乘积算符基础上，引入了对称化乘积算符，并对其数理基础进行了详细论证。推导了算符循环对易关系决定的Liourill-Von Neumann方程的解，给出了算符间普遍存在的循环对易关系及其相应的演化公式。据此，以InS(I = 1/2, S = 1/2; n = 2,3)自旋体系为例，对DEPT脉冲序列进行了分析；结果表明，该方法较通常的乘积算符方法对磁等性自旋体系的分析要简单、实用，且物理意义更加明确。由于该方法涉及较多的算符对易关系，因此不易计算机编程。2. 在对称化乘积算符基础上引入了多量子积算符的概念。以In(I = 1/2; n = 2,3)体系为例，给出了两者的互换关系。推导出了具有标量耦合作用的两组合粒子体系普适的多量子积算符环对易关系及相应的演化解析式。多量子积算符方法可望将1／2－自旋磁等性组合粒子表象与自旋大于1／2的单粒子表象统一起来，并为计算机模拟提供新的数学方法。该方法尚有待于进一步研究。

RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

HIGH-RESOLUTION DLTS AND ITS APPLICATION TO LATTICE-MISMATCH-INDUCED DEEP LEVELS IN INGAP

A new method of differentiating the deep level transient spectroscopy (DLTS) signal is used to increase the resolution of conventional DLTS. Using this method, more than one single deep level with small differences in activation energy or capture cross section, which are often hard to determine by conventional DLTS, can be distinguished. A series of lattice-mismatched InxGa1-xP samples are measured by improved DLTS to determine accurately the activation energy of a lattice-mismatch-induced deep level. This level cannot be clearly determined using conventional DLTS because the two signals partly overlap each other. Both the signals are thought to originate from a phosophorus vacancy and lattice-mismatch-induced defect.

DISORDER POINT FOR 2D ELECTRONS IN A HALF-FILLED LANDAU-LEVEL

Short-range correlations of two-dimensional electrons in a strong magnetic field are shown to be triangular in nature well below half-filling, but honeycomb well above half-filling. The half-filling point is thus proposed, and qualitatively confirmed by three-body correlation calculations, to be a new type of disorder point where short-range correlations change character. A wavefunction study also suggests that nodes become unbound at half-filling. Evidence for incompressibility but deformability of the half-filling state earlier suggested by Fano, Ortolani and Tosatti, is also presented and found to be in agreement with recent experiments.

Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes

The photoelectric properties of the lattice-matched GaAs/AlxGa1-xAs quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier and the number of period were studied in a nonaqueous electrolyte. A new kind of structure of multiple quantum well electrode with varied well width, possessing the quantum yield three times that of GaAs bulk materials, was designed and fabricated.

Effects of point defects on lattice parameters of semiconductors

A model for analyzing the correlation between lattice parameters and point defects in semiconductors has been established. The results of this model for analyzing the substitutes in semiconductors are in accordance with those from Vegard's law and experiments. Based on this model, the lattice strains caused by the antisites, the tetrahedral and octahedral single interstitials, and the interstitial couples are analyzed. The superdilation in lattice parameters of GaAs grown at low temperatures by molecular-beam epitaxy can be interpreted by this model, which is in accordance with the experimental results. This model provides a way of analyzing the stoichiometry in bulk and epitaxial compound semiconductors nondestructively.

GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than similar to 60 Angstrom, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 Angstrom, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

Transient photocurrent investigation of photo-processes of lattice-matched MQW GaAs/AlxGa1-xAs electrode

Transient photocurrents induced by short light pulses at lattice-matched GaAs/AlxGa1-xAs multiple quantum well (MQW) electrodes were studied as a function of electrode potential. Dual exponential photocurrent decay transients were observed at various potentials. By analysis of the dual exponential decay transients, information on steady state photocurrents (I-s), surface collection of photoexcited minority carriers (G(0)) and lifetimes of surface states (T-s) was obtained. The kinetic behaviors of photoprocesses at illuminated MQW/electrolyte interface were discussed.

Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates

We show that part of the reflectance difference resonance near the E-0 energy of ZnSe is due to the anisotropic in-plane strain in the ZnSe thin films, as films grown on three distinctly different substrates, GaAs, GaP, and ZnS, all show the resonance at the same energy. Such anisotropic strain induced resonance is predicted and also observed near the E-1/E-1+Delta(1) energies in ZnSe grown on GaAs. The theory also predicts that there should be no resonance due to strain at, the E-0+Delta(0) energy, which is consistent with experiments. The strain anisotropy is rather independent of the ZnSe layer thickness, or whether the film is strain relaxed. For ZnSe films with large lattice mismatch with substrates, the resonance at the E-1/E-1+Delta(1) energies is absent, very likely due to the poor crystalline quality of the 20 nm or so surface layer. (C) 2000 American Vacuum Society. [S0734-211X(00)05604-3].