Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes

The photoelectric properties of the lattice-matched GaAs/AlxGa1-xAs quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier and the number of period were studied in a nonaqueous electrolyte. A new kind of structure of multiple quantum well electrode with varied well width, possessing the quantum yield three times that of GaAs bulk materials, was designed and fabricated.