Experimental study on K alpha X-ray emission from intense femtosecond laser-solid interactions

The characteristics of K alpha X-ray sources generated by p-polarized femtosecond laser-solid interactions are experimentally studied in the relativistic regime. By use of knife-edge image technique and a single-photon-counting X-ray CCD camera, we obtaine the source size, the spectrum and the conversion efficiency of the Ka X-ray sources. The experimental results show that the conversion efficiency of Ka photons reaches an optimum value of 7.08 x 10(-6)/sr at the laser intensity of 1.6 x 10(18) W/cm(2), which is different from the Reich's simulation results (Reich et al., 2000 Phys. Rev. Lett. 84 4846). We find that about 10% of laser energy is converted into the forward hot electrons at the laser intensity of 1.6 x 10(18) W/cm(2).

碱性染料砷钼杂多酸多元络合物显色反应的研究及其在光度分析中的应用

本论文“碱性染料砷钼杂多酸多元络合物显色反应的研究及其在光度分析中的应用”包括相互独立的两部分。I.在聚乙烯醇存在下，乙基紫－砷钼杂多酸缔合物分光光度法测定痕量砷的研究本文对乙基紫（EV）等8种碱染料和聚乙烯醇（PVA）等4种分散剂进行了筛选，详细地研究了在PVA存在下，乙基紫－砷钼杂多酸的显色反应的分光光度条件，用三种方法测定了缔合物的组成，建立了一种新的测砷方法，并对水样和Na_2SO_4等样品中微量砷进行了测定。结果表明，在PVA存在下，EV－AsM。杂多酸显色反应的最佳光度测定条件为：[H_2SO_4]=0.056 N，[MoO_4~-]=4.0*10~(-4)M, [EV]=8.0*10~(-5)M, 1% PVA 5ml/25ml，50℃水浴加热10分钟左右。在此最佳光度条件下，缔合物稳定性可达4小时以上，缔合物最大吸收波长为550nm，0－6μg As~(+5)/25ml符合比尔定律。表观摩尔吸光系数ε＝2.3*10~5在目前所发表的水相光度法测定微量砷的文献报导中，本法灵敏度最高。缔合物中，EV与砷钼杂多酸之比为3：1。测定样品时，回收率为98～102％，检测下限为2ppb（水样50ml），40ppb（Na_2SO_4, 10g）。方法灵敏度较高且操作步骤亦较简便、快速。II.乙基罗丹明B－砷钼杂多酸多元络合物显色反应的光光度研究本文研究了在PVA存在下，乙基罗丹阴B（ERhB）－砷，钼杂多酸络合物显色反应的分光光度条件，缔合物组成，可见红外光谱及反应历程。结果表明，在PVA存在下，ERhB-AsM。杂多酸显色反应的最佳光度测定条件为：[H_2SO_4]=0.68V, [MoO_4~2]=3.44*10~(-2)M, [ERhB]=3.79*10~(-5)M，1% PVA 5ml/25ml。在此条件下，本显色反应不需水浴加热，显色速度极快，显色液可稳定2小时，缔合物最大吸收波长为589nm，试剂空白最大吸收波长为557nm，0～5μg As~(+5)/25ml符合比尔定律，表观摩尔吸光系数ε=3.0*10~5。在测定砷所有水相光度法中本法灵敏度最高。缔合物中ERhB与砷钼杂多酸之比为3：1，ERhB与砷钼杂多酸是离子键缔合在一起的，ERhB在缔合物中结构并没有由于成络作用而发生变化。

中国海洋深地震探测与研究进展

对中国（大陆）的海洋深地震探测工作进行了回顾，重点讨论了南海北部边缘OBS探测的几条剖面及动力学意

INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL

The composition and microstructure of buried layers of AlN formed by high energy N+ ion implantation into polycrystalline Al have been determined. Both bulk and evaporated thin films of Al have been implanted with 100 and 200 keV N+ ions to doses of up to 1.8 x 10(18)/cm2. The layers have been characterised using SIMS, XTEM, X-ray diffraction, FTIR, RBS and in terms of their microhardness. It is found that, for doses greater than the critical dose, buried, polycrystalline AlN layers are formed with preferred (100) or (002) orientations, which are sample specific. With increasing dose the nitrogen concentration saturates at the value for stoichiometric AlN although the synthesised compound is found to be rich in oxygen.

INDIUM OHMIC CONTACTS TO N-ZNSE

The reaction between an indium over layer and high purity MBE grown n-ZnSe chlorine doped (2x 10(18) cm-3) epilayers has been investigated using X-ray diffraction, Rutherford backscattering spectroscopy, X-ray photoelectron and Auger electron spectroscopy, and by electrical function tests (I-V and C-V). Good ohmic contacts were formed after annealing at 250 or 300-degrees-C for a few minutes in forming gas. Annealing at lower or higher temperatures resulted in higher resistance or rectifying contacts. The data show that no compounds were formed at the interface; instead In appeared to diffuse into the ZnSe. High surface doping densities appear to allow an ohmic contact, but the electrical data suggest that compensation effects are also very significant in the formation of the contact. These effects must be considered for successful formation of the ohmic contact.

PHOTOLUMINESCENCE INVESTIGATIONS OF CD1-XMNXTE UNDER HYDROSTATIC-PRESSURE

The photoluminescence of Cd1-xMnxTe with x=0.25, 0.40, and 0.60 is investigated at 77 K and different pressures. The pressure coefficients of the photoluminescence bands Cd0.75Mn0.25Te and Cd0.6Mn0.4Te are found to be positive and the magnitudes are about 8 X 10(-3) eV/kbar, which is in good agreement with the pressure coefficients of the interband transition. The pressure coefficient of the photoluminescence bands for Cd0.4Mn0.6Te is found to be -6 X 10(-3) eV/kbar, which is quite different from the pressure coefficient of the interband transition. The possible transition mechanism is discussed in terms of group theory and crystal field theory.

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.

铟掺杂ZnO体单晶的生长及其性质

研究了In掺杂n型ZnO体单晶的化学气相传输法生长和材料性质.利用霍尔效应、X射线光电子能谱、光吸收谱、喇曼散射、阴极荧光谱等手段对晶体的特性和缺陷进行了分析.掺In后容易获得浓度为10~(18)～10~(19)cm~(-3)的n型ZnO单晶,掺入杂质的激活效率很高.随着掺杂浓度的提高,ZnO单晶的带边吸收和电学性质等发生明显的变化.分析了掺In-ZnO单晶的缺陷及其对材料性质的影响.

Optical and Electrical Properties of GaN.Mg Grown by MOCVD

Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were annealed at temperatures between 550 and 950℃. Room temperature （RT） Hall and photoluminescence （PL） spectroscopy measurements were performed on the as-grown and annealed samples. After annealing at 850℃, a high hole concentration of 8 × 10~(17) cm~(-3) and a resistivity of 0. 8lΩ·cm are obtained. Two dominant defect-related PL emission bands in GaN.. Mg are investigated; the blue band is centered at 2. 8eV （BL） and the ultraviolet emission band is around 3.27eV （UVL）. The relative intensity of BL to UVL increases after annealing at 550℃, but decreases when theannealing temperature is raised from 650 to 850℃, and finally increases sharply when the annealing temperature is raised to 950C. The hole concentration increases with increased Mg doping, and decreases for higher Mg doping concentrations. These results indicate that the difficulties in achieving high hole concentration of 10~(18)cm~(-3) appear to be related not only to hydrogen passivation, but also to self-compensation.

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.

RF-MBE生长AlN/GaN超晶格结构二维电子气材料

用射频等离子体辅助分子束外延技术（RF-MBE）在c面蓝宝石衬底上外延了高质量的GaN膜以及AlN/GaN超晶格结构极化感应二维电子气材料。所获得的掺Si的GaN膜室温电子浓度为2.2 * 10~(18)cm~(-3)，相应的电子迁移率为221cm~2/(V·s);1μm厚的GaN外延膜的（0002）X射线衍射摇摆曲线半高宽（FWHM）为7’；极化感应产生的二维电子气室温电子迁移率达到1086cm~2/(V·s)，相应的二维电子气面密度为7.5 * 10~(12)cm~(-2)。

氮化H_2-O_2合成薄栅氧抗辐照特性

于2010-11-23批量导入

CMOS集成电路用Φ150-200mm外延硅材料

报道了Φ150mm CMOS硅外延材料的研究开发及集成电路应用成果，对Φ200mmP/P~-硅外延材料进行了初步探索研究。Φ150mm P/P~+硅外延片实现了批量生产，并成功应用于集成电路生产线，芯片成品率大于80%。硅外延片的参数指标能满足集成电路制造要求。

中国竹材腐朽真菌多样性初步研究

生物多样性是人类赖以生存的物质基础，菌物多样性是生物多样性的重要组成。我国位于亚太竹区，是世界竹类的分布中心之一，有着极为丰富的竹种资源，并孕育着丰富的菌物资源。近年来，我国对木材腐朽菌，特别是多孔菌进行了广泛深入的研究，发表了许多新种和中国新记录种，但是对生于竹材上的腐朽菌却少见报道。因此，开展竹材腐朽真菌种类的研究对深入认识腐朽菌物种多样性，积极利用这些菌物资源，防治竹类病害以及竹材保藏都具有重要意义。 本论文按照多孔菌现代分类学方法对采集自我国10省市18个自然保护区、森林公园和林场的竹材腐朽真菌标本进行了初步的研究。对11种重要的竹材腐朽菌进行详细的描述和显微结构绘图，记载了每种的寄主、国内分布，并对每种与其相似种的联系和区别以及腐朽类型进行了讨论。 研究结果显示，我国范围内共记录及描述竹材腐朽真菌从5属增加到28属，新增属分别为：假芝属、薄孔菌属、小薄孔菌属、蜡孔菌属、拟蜡孔菌属、小集毛孔菌属、囊孔菌属、浅孔菌属、圆齿菌属、产丝齿菌属、耙齿菌属、容氏孔菌属、锐孔菌属、多年卧孔菌属、木层孔菌属、硬孔菌属、中国干腐菌属、干皮孔菌属、褶菌属、栓孔菌属、附毛孔菌属、孢孔菌属和中国记录属拟浅孔菌属 (Grammotheloposis)，其中广义多孔菌有20属，革菌2属，齿菌1属；有15属为白腐菌，1属褐腐。 新增竹材腐朽真菌19种，其中多孔菌有15种，革菌1种，齿菌1种，褶菌2属。相似干朽菌(Serpula similis)和棕榈浅孔菌（Grammothele fuligo）竹区分布较多，前者是腐朽病原菌，后者腐朽作用不强，但影响竹材美观。二者在中国南方竹区广泛分布，是对竹材危害较严重的种类。而长江以北分布极少。另外有药用菌4种，分别为浅黄囊孔菌（Flavodon flavus）、宽棱木层孔菌(Phellinus torulosus)、裂褶菌(Schizophyllum commune)和灵芝(Ganoderma lucidum)。待定种1种(Grammotheloposis sp.)。