Realization of low threshold of InGaAs/InAlAs quantum cascade laser

By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) material has greatly been improved. The spectrum of double x-ray diffraction indicates that the interface between the constituent layers is very smooth, the lattice mismatch between the epilayer and the substrate is less than 0.1%, and the periodicity fluctuation of the active region is not more than 4.2%. The QC laser with the emission wavelength of about 5.1 mum is operated at the threshold of 0.73 kA/cm(2) at liquid nitrogen temperature with the repetition rate of 10kHz and at a duty cycle of 1%. Meanwhile, the performance of the laser can be improved with suitable post process techniques such as the metallic ohmic contact technology.

Magnetic properties of silicon doped with gadolinium

The magnetic semiconductor GdxSi1-x was prepared by low-energy dual ion-beam epitaxy. GdxSi1-x shows excellent magnetic properties at room temperature. A high magnetic moment of 10 mu(B) per Gd atom is observed. The high atomic magnetic moment is interpreted as being a result of the RKKY mechanism. The indirect exchange interaction between ions is strong at large distances due to the low state density of the carriers in the magnetic semiconductor.

Magnetic properties and rectifying behaviour of silicon doped with gadolinium

The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. The magnetic layer GdxSi1-x shows excellent magnetic properties at room temperature. High magnetic moment 10mu(B) per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.

Content analyses in GaMnAs by double-crystal X-ray diffraction

A model for analyzing point defects in compound crystals was improved. Based on this modified model, a method for measuring Mn content in GaMnAs was established. A technique for eliminating the zero-drift-error was also established in the experiments of X-ray diffraction. With these methods, the Mn content in GaMnAs single crystals fabricated by the ion-beam epitaxy system was analyzed.

Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction

Phosphor-doped nano-crystalline silicon ((n))nc-Si:H) films are successfully grown on the p-type (100) oriented crystal silicon ((p) c-Si) substrate by conventional plasma-enhanced chemical vapor deposition method. The films are obtained using high H-2 diluted SiH4 as a reaction gas source and using PH3 as the doping gas source of phosphor atoms. Futhermore, the heterojunction diodes are also fabricated by using (n)nc-Si:H films and (p)c-Si substrate. I-V properties are investigated in the temperature range of 230-420K. The experimental results domenstrate that (n)nc-Si:H/(p) c-Si heterojunction is a typical abrupt heterojunction having good rectifing and temperature properties. Carrier transport mechanisms are tunneling - recombination model at forward bias voltages. In the range of low bias voltages ( V-F< 0.8 V), the current is determined by recombination at the (n)nc-Si:H side of the space charge region, while the current becomes tunneing at higher bias voltages( V-F>1.0 V). The present heterojunction has high reverse breakdown voltage ( > - 75 V) and low reverse current (approximate to nA).

Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P

We introduce a double source electron beam evaporation (DSEBET) technique in this paper. The refractive index coatings were fabricated on K9 glass substrate by adjusting the evaporation rates of two independent sources. The coatings, which were described by atomic force microscopy (AFM), show good compactness and homogeneity. The antireflective (AR) coatings were fabricated on Superluminescent Diodes (SLD) by DSEBET. The hybrid AR coatings on the facets of SLD were prepared in evaporation rates of 0.22nm/s and 0.75nm/s for silicon and silicon dioxide, respectively. The results of AFM and spectral performance of coated SLD show that DSEBET has a promising future in preparing the coatings on optoelectronic devices.

Effective-mass theory for InAs/GaAs strained coupled quantum dots

In the framework of effective-mass envelope-function theory, the optical transitions of InAs/GaAs strained coupled quantum dots grown on GaAs (100) oriented substrates are studied. At the Gamma point, the electron and hole energy levels, the distribution of electron and hole wave functions along the growth and parallel directions, the optical transition-matrix elements, the exciton states, and absorption spectra are calculated. In calculations, the effects due to the different effective masses of electrons and holes in different materials are included. Our theoretical results are in good agreement with the available experimental data.

稀土功能薄膜的离子束外延法制备生长研究

介绍了一种利用离子束外延（Ion-beam Epitaxy, IBE）技术制备生长高纯稀土功能薄膜的新方法. 以纯度要求不高的低成本稀土氯化物为原材料来产生大束流稀土元素离子, 通过准确控制双束合成或单束浅结注入掺杂的同位素纯低能离子的能量、束斑形状、沉积剂量与配比及生长温度, 在超高真空生长室内实现了稀土功能薄膜的高纯生长和低温优质外延. 文中除了对新方法的技术特点、实施方式和应注意的关键技术进行了阐述, 还结合CeO2, Gd2O3, GdxSi1-x等薄膜的制备研究, 讨论了离子的束流密度、剂量配比、能量和生长温度等生长参数对成膜质量的影响.

MBE Growth of High Electron Mobility InP Epilayers

The molecular beam epitaxial growth of high quality epilayers on （100） InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/（V · s） and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.

Dynamics of excited m-dichlorobenzene

Dynamics of excited m-dichlorobenzene is investigated in real time by femtosecond pump-probe method, combined with time-of-flight mass spectrometric detection in a supersonic molecular beam. The yields of the parent ion and daughter ion C6H4CI+ are examined as a function of the delay between the 270 and 810 nm femtosecond laser pulses, respectively. The lifetime of the first singlet excited state S-1 of m-dichlorobenzene is measured. The origin of this daughter ion C6H4CI+ is discussed. The ladder mechanism is proposed to form the fragment ion. In addition, our experimental results exhibit a rapid damped sinusoidal oscillation over intermediate time delays, which is due to quantum beat effects.

Ambipolar organic heterojunction transistors with various p-type semiconductors

Ambipolar transport has been realized in organic heterojunction transistors with metal phthalocyanines, phenanthrene-based conjugated oligomers as the first semiconductors and copper-hexadecafluoro-phthalocyanine as the second semiconductor. The electron and hole mobilities of ambipolar devices with rod-like molecules were comparable to the corresponding single component devices, while the carrier mobility of ambipolar devices with disk-like molecules was much lower than the corresponding single component devices.

松辽盆地长岭断陷火山岩气藏的形成条件与分布规律

Changling fault depression is a compound fault depression complicated by interior fault, with faults in the west and overlap in the west. North of Changling fault depression show NNE strike while south is NW strike. Changling fault depression has undergone twochasmic stage which control the development and distribution of volcanic rock, one depression stage, later inversion and uplift stage which control the formation of natural gas reservoir, and basin atrophic stage. The main boundary faults and main faults in Changling fault depression control three volcanic cycles and the distribution of volcanic rock. Seismic reflection characteristic and logging response characteristic of volcanic rock in study area are obvious, and the distribution characteristic, volcanic cycle and active stage of volcanic rock can be revealed by seismic attribute, conventional logging data can distinguish clastic rock from volcanic rock or distinguish partial different types of volcanic rock. The reservoir property of rhyolite and volcanic tuff are the best. Favorable volcanic reservoir can be preserved in deep zone. Imaging logging and frequency decompostion technology of seismic data act as effective role in the study of reservoir physical property and gas-bearing properties of volcanic rock.. Hydrocarbon gas in study area is high and over mature coal type gas, the origin of CO2 is complex, it is either inorganic origin or organic origin, or mixing origin. Hydrocarbon gas is mainly originate from Shahezi formation and Yingcheng formation source rocks, CO2 is mainly mantle source gas. Hydrocarbon has the characteristics of continuous accumulation with two charging peak. The first peak represent liquid hydrocarbon accumulation time, The second peak stand for the accumulation time of gaseous hydrocarbon.CO2 accumulate approximately in Neocene. The source rock distribution range, volcanic rock and favorable reservoir facies, distribution characteristic of deep fault (gas source fault) and late inversion structure are the major factors to control gas reservoir formation and distribution. All the results show that these traps that consist of big inherited paleo uplift(paleo slope), stratigraphic overlap and thinning out, volcanic rock, are the most advantageous target zone.

南海天然气水合物地热学研究

Through generalizing the thermal field characteristics in gas hydrates distribution area in the world, the favorable thermal conditions for gas hydrates in the South China Sea are analyzed firstly. On the basis of above analysis, focused on the gas hydrates stability zone (GHSZ), the dissertation initiated the gas hydrates studies with geothermal methods in the South China Sea which will provide useful information for gas hydrates resource exploration and evaluation in the future. On the basis of study on hydrates phase equilibrium and the GHSZ affecting factors, the potential planar distribution of gas hydrates is determined by studying the temperature and pressure conditions in the sea bottom with different water depth, and the thickness of GHSZ is attained by solving the hydrates phase boundary curve equation and geothermal gradient curve equation. The result shows that, if the chemical composition of hydrocarbons contains methane only and the salt content of water is 3.5%, hydrates can form and keep stable at sea bottom at water depth not less than 550m, and the thickness of GHSZ is more than 200m in Xisha Through, Southeastern area of Dongsha Islands, Southwestern basin of Taiwan Island, northern area of Nansha Trough. The GHSZ is thicker with heat flow, geothermal gradient, and thermal conductivity decreasing, and with water depth increasing. Geothermal field simulating also attains the base of GHSZ in Xisha through, which is less than the depth of BSR. Although the present T-P conditions is not the most favorable for gas hydrates through 6Ma history, gas hydrates are still profitable in Xisha Through, Southeastern area of Dongsha Islands, Southwestern basin of Taiwan Island, Luzon Trough and northern area of Nansha Trough by systemic study on the sedimentary and structural characteristics, the conditions of T-P and natural gas source, considering geochemical and geophysical indications found in the South China Sea.

Photodissociation of 1-bromo-2-chloroethane at 266 nm

The photodissociation of CH2BrCH2Cl at 266 nm has been investigated on the universal crossed molecular beam machine. The primary dissociation step leads exclusively to the formation of CH2CH2Cl radicals and Br atoms in the electronic ground state as well as in the spin-orbit excited state, with a branching ratio 2 +/- 1:8 +/- 1. Photofragment total c.m. translational energy distribution P(E-t) has been obtained and about 64% of the available energy is partitioned into translational energy for Br channel and about 28.5% of the available energy is partitioned into translational energy for Br* channel. The anisotropy parameters are determined to be beta(Br*) = 0.8 +/- 0.2 and beta(Br) = -0.6 +/- 0.2, respectively. Some CH2CH2Cl radicals with large internal excitation (corresponding to formation of ground state Br channel) may undergo secondary dissociation to form CH2CH2 +/- Cl. The experimental results are discussed in terms of a model that involves the initial excitation of two repulsive electronic states: one from an parallel transition to the (3)Q(0) state, and the other from a perpendicular transition to the (3)Q(1), (1)Q states. (C) 1999 Elsevier Science B.V. All rights reserved.

Photofragment translational spectroscopy of p-bromotoluene at 266 nm

Photodissociation of p-bromotoluene at 266 nm has been investigated on the universal crossed molecular beam machine, and translational energy distribution P(E-t) as well as the anisotropy parameter beta have been obtained. Photofragment translational energy distribution P(E-t) reveals that similar to 38.5% of the available energy is partitioned into translational energy. The anisotropy parameter beta is determined to be -0.4 +/- 0.2. From P(E-t) and beta, we deduce that p-bromotoluene photodissociation is a fast process and the perpendicular transition plays a central role at this wavelength. The possible mechanism has been discussed and comparison of p-bromotoluene with bromobenzene, o-bromotoluene has also been made. (C) 1999 Elsevier Science B.V. All rights reserved.