Magnetic properties and rectifying behaviour of silicon doped with gadolinium
| Data(s) |
2003
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| Resumo |
The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. The magnetic layer GdxSi1-x shows excellent magnetic properties at room temperature. High magnetic moment 10mu(B) per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed. |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
Zhou JP; Chen NF; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY .Magnetic properties and rectifying behaviour of silicon doped with gadolinium ,ACTA PHYSICA SINICA,2003 ,52 (6):1469-1473 |
| Palavras-Chave | #半导体物理 #magnetic semiconductor #magnetic p-n junction #ion beam epitaxy #gadolinium silicides #METAL-INSULATOR-TRANSITION #P-N-JUNCTION #INDUCED FERROMAGNETISM #SI/SIER INTERFACE #BEAM EPITAXY #SEMICONDUCTORS #EXCITATION #MAGNETORESISTANCE #ALLOYS |
| Tipo |
期刊论文 |
