Magnetic properties of silicon doped with gadolinium
| Data(s) |
2003
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|---|---|
| Resumo |
The magnetic semiconductor GdxSi1-x was prepared by low-energy dual ion-beam epitaxy. GdxSi1-x shows excellent magnetic properties at room temperature. A high magnetic moment of 10 mu(B) per Gd atom is observed. The high atomic magnetic moment is interpreted as being a result of the RKKY mechanism. The indirect exchange interaction between ions is strong at large distances due to the low state density of the carriers in the magnetic semiconductor. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhou JP; Chen NF; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY .Magnetic properties of silicon doped with gadolinium ,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2003 ,77 (3-4):599-602 |
| Palavras-Chave | #半导体材料 #METAL-INSULATOR-TRANSITION #BEAM EPITAXY TECHNIQUE #SEMICONDUCTING SILICIDES #INDUCED FERROMAGNETISM #FILMS #MAGNETORESISTANCE #TEMPERATURE #ALLOYS |
| Tipo |
期刊论文 |
