Formation and characterization of tin oxide aerogel derived from sol-gel process based on tetra(n-butoxy)tin(IV)

Transparent and translucent SnO2 aerogels with high specific surface area (>300m(2)/g) have been prepared by sol-gel process using tetra(n-butoxy)tin(IV) as a starting compound, and supercritical drying technique for solvent extraction. Light scattering measurements reveal that the polymeric cluster size distribution in sol system is gradually broadened during sol-gel transition. SEM images show that the aerogels are made up of the cottonlike oxide agglomerates with a large number of Pores. TEM images show that these aerogels seem to be self-similar at different magnifications. Their pore size distribution is pretty wide ranging, from mesopore to macropore especially for that of translucent aerogel. (C) 2004 Elsevier B.V. All rights reserved.

γ-LiAIO2上非极性ZnO薄膜制备及其光谱性质研究

利用激光脉冲沉积（PLD）技术在（302）γ-LiAIO2衬底上成功生长了非极性的a面（112^-0）γZnO薄膜．衬底温度为350℃时，薄膜是混合取向（a向和C向），以c面ZnO为主，且晶粒尺寸分布很宽；提高温度达500℃，薄膜变为单一的（1120）取向，摇摆曲线半高宽O.65^o，晶粒尺寸分布趋窄，利用偏振透射谱可以明显看出其面内的各向异性．衬底温度650℃下制备的样品晶粒继续长大，虽然摇摆曲线半高宽变大，但光致发光谱（PL）带边发射峰半高宽仅为105meV，比在350℃，500℃下制备的样品小1／5

Eu:Y2O3 nano-phosphor prepared by novel energy-saving solution combustion method

A novel energy- and time-saving solution combustion method has been developed to prepare Eu:Y2O3 nano-crystal line phosphor. This novel method employs anhydrous ethanol as solvent and fuel. The prepared nano-crystals after heat-treatment own narrow size distribution, well dispersibility and sinterability, confirmed by XRD, TEM and FTIR. The emission spectra of nano-Eu:Y2O3 Samples show clear nano-size related phenomena. (c) 2007 Elsevier B.V. All rights reserved.

Spray combustion synthesis of nanocrystalline Y2O3 and its thermodynamical and morphological study

Nano Y2O3 particles with a spherical shape and narrow size distribution have been prepared by a novel spray combustion method. The experimental procedure is briefly described and the thermodynamical process of the post-heat treatment is investigated in this paper. The precursor fully crystallized when treated at as low as 400 degrees C. Prepared particles showed spherical shape and well dispersibility under different treating conditions. Narrow size distribution of particles was achieved even when the precursor was treated at 1373 K. (C) 2007 Elsevier B.V. All rights reserved.

Coagulation removal of melanoidins from biologically treated molasses wastewater using ferric chloride

The pigments (melanoidins) in molasses wastewater are refractory to conventional biological treatment. Ferric chloride was used as coagulant to remove color and chemical oxygen demand (COD) from molasses effluent. Using jar test procedure, main operating conditions such as pH and coagulant dosage were investigated. Under the optimum conditions, up to 86% and 96% of COD and color removal efficiencies were achieved. Residual turbidity in supernatant was less than 5 NTU and Fe3+ concentration was negligible because of effective destabilization and subsequent sedimentation. The results of high performance size exclusion chromatography (HPSEC) show that low molecular weight (MW) fraction of melanoidins is more reactive than high MW fraction and increase in the concentration of the lowest MW organic group is related to the capacity of charge neutralization. Aggregate size measurement reveals the size effect on the settleability of flocs formed, with larger flocs settling more rapidly. Charge neutralization and co-precipitation are proposed as predominant coagulation mechanism under the optimum conditions. (C) 2009 Elsevier B.V. All rights reserved.

The application of SnS nanoparticles to bulk heterojunction solar cells

Tin mono-sulphide (SnS) nanoparticles were synthesized by a facile method. Reactions producing narrow size distribution SnS nanoparticles with the diameter of 5.0-10 nm were carried out in an ethylene glycol solution at 150 degrees C for 24 h. Bulk heterojunction solar cells with the structure of indium tin oxide (ITO)/polyethylenedioxythiophene polystyrenesulphonate (PEDOT PSS)/SnS polymer/Al were fabricated by blending the nanoparticles with a conjugated polymer to form the active layer for the first time. Current density-voltage characterization of the devices showed that due to the addition of SnS nanoparticles to the polymer film, the device performance can be dramatically improved, compared with that of the pristine polymer solar cells. (c) 2009 Published by Elsevier B.V.

Shape stability of InAs self-assembled islands on vicinal GaAs(001) substrates

We have grown InAs self-assembled islands on vicinal GaAs( 001) substrates. Atomic force microscopy and photoluminescence studies show that the islands have a clear bimodal size distribution. While most of the small islands whose growth is limited by the width of one multi-atomic step have compact symmetric shapes, a large fraction of the large islands limited by the width of one step plus one terrace have asymmetric shapes which are elongated along the multi-atomic step lines. These results can be attributed to the shape-related energy of the islands at different states of their growth. (C) 2008 Elsevier B. V. All rights reserved.

Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots

We obtain low-density charged InAs quantum dots with an emission wavelength below 1 mu m using a low InAs growth rate. The quantum dots have a bimodal size distribution with an emission wavelength of around 1340 nm and 1000 nm, respectively. We observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77 K.

Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD

We present a comparative study of InAs quantum dots grown on Si-doped GaAs (10 0) substrates, Si-doped GaAs (10 0) vicinal substrates, and semi-insulating GaAs (10 0) substrates. The density and size distribution of quantum dots varied greatly with the different substrates used. While dots on exact substrates showed only one dominant size, a clear bimodal size distribution of the InAs quantum dots was observed on GaAs vicinal substrates, which is attributed to the reduced surface diffusion due to the presence of multiatomic steps. The emission wavelength is blueshifted during the growth of GaAs cap layer with a significant narrowing of FWHM. We found that the blueshift is smaller for QDs grown on GaAs (10 0) vicinal substrates than that for dots on exact GaAs (100) substrates. This is attributed to the energy barrier formed at the multiatomic step kinks which prohibits the migration of In adatoms during the early stage of cap layer growth. (c) 2005 Elsevier B.V. All rights reserved.

Ordered InAs quantum dots with controllable periods grown on stripe-patterned GaAs substrates

GaAs (001) substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of InAs quantum dots (QDs). InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy, A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentially nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.

Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix

The authors report the self-organized growth of InAs/InAlAs quantum wires on nominal (001) InP substrate and (001) InP substrates misoriented by 2 degrees, 4 degrees, and 8 degrees towards both [-110] and [110]. The influence of substrate misorientation on the structural and optical properties of these InAs/InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared with that grown on nominal (001) InP substrate, the density of InAs/InAlAs quantum wires grown on misoriented InP(001) substrates is enhanced. A strong lateral composition modulation effect take place in the InAlAs buffer layers grown on misoriented InP substrates with large off-cut angles (4 degrees and 8 degrees), which induces a nucleation template for the first-period InAs quantum wires and greatly improve the size distribution of InAs quantum wires. InAs/InAlAs quantum wires grown on InP (001) substrate 8 degrees off cut towards [-110] show the best size homogeneity and photoluminescence intensity. (c) 2007 American Institute of Physics.

Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots

The influence of GaAS(1 0 0)2 degrees substrate misorientation on the formation and optical properties of InAs quantum dots (QDs) has been studied in compare with dots on exact GaAs(1 0 0) substrates. It is shown that, while QDs on exact substrates have only one dominant size, dots on misoriented substrates are formed in lines with a clear bimodal size distribution. Room temperature photoluminescence measurements show that QDs on misoriented substrates have narrower FWHM, longer emission wavelength and much larger PL intensity relative to those of dots on exact substrates. However, our rapid thermal annealing (RTA) experiments indicate that annealing shows a stronger effect on dots with misoriented substrates by greatly accelerating the degradation of material quality. (c) 2005 Elsevier B.V All rights reserved.

Porous ZnAl2O4 spinel nanorods doped with Eu3+: synthesis and photoluminescence

Eu3+-doped zinc aluminate (ZnAl2O4) nanorods with a spinel structure were successfully synthesized via an annealing transformation of layered precursors obtained by a homogeneous coprecipitation method combined with surfactant assembly. These spinel nanorods, which consist of much finer nanofibres together with large quantities of irregular mesopores and which possess a large surface area of 93.2 m(2) g(-1) and a relatively narrow pore size distribution in the range of 6 - 20 nm, are an ideal optical host for Eu3+ luminescent centres. In this nanostructure, rather disordered surroundings induce the typical electric-dipole emission (D-5(0) --> F-7(2)) of Eu3+ to predominate and broaden.

Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties

The growth of InAs quantum dots on vicinal GaAs (100) Substrates was systematically studied using low-pressure metalorganic chemical vapor deposition (MOCVD). The dots showed a clear bimodal size distribution on vicinal substrates. The way of evolution of this bimodal size distribution was studied as a function of growth temperature, InAs layer thickness and InAs deposition rate. The optical properties of dots grown on vicinal substrates were also studied by photoluminescence (PL). It was found that, compared with dots on exact substrates, dots on vicinal substrates had better optical properties such as a narrower PL line width, a longer emission wavelength, and a larger PL intensity. (c) 2006 Elsevier B.V. All rights reserved.

Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method

Passivation and low temperature method was carried out to grow InGaN/GaN quantum dots (QDs). Atomic force microscope observations were performed to investigate the evolution of the surface morphology of the InGaN QDs superlattices with increasing the superlattices layer number. The result shows that the size of the QDs increases with increasing superlattices layer number. The QDs height and diameter increase from 18 and 50 run for the monolayer InGaN QDs to 37 and 80 urn for the four-stacked InGaN QDs layers, respectively. This result is considered to be due to the stress field from the sub-layer dots. (C) 2003 Elsevier Science B.V. All rights reserved.