Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method

Passivation and low temperature method was carried out to grow InGaN/GaN quantum dots (QDs). Atomic force microscope observations were performed to investigate the evolution of the surface morphology of the InGaN QDs superlattices with increasing the superlattices layer number. The result shows that the size of the QDs increases with increasing superlattices layer number. The QDs height and diameter increase from 18 and 50 run for the monolayer InGaN QDs to 37 and 80 urn for the four-stacked InGaN QDs layers, respectively. This result is considered to be due to the stress field from the sub-layer dots. (C) 2003 Elsevier Science B.V. All rights reserved.