γ-LiAIO2上非极性ZnO薄膜制备及其光谱性质研究

利用激光脉冲沉积（PLD）技术在（302）γ-LiAIO2衬底上成功生长了非极性的a面（112^-0）γZnO薄膜．衬底温度为350℃时，薄膜是混合取向（a向和C向），以c面ZnO为主，且晶粒尺寸分布很宽；提高温度达500℃，薄膜变为单一的（1120）取向，摇摆曲线半高宽O.65^o，晶粒尺寸分布趋窄，利用偏振透射谱可以明显看出其面内的各向异性．衬底温度650℃下制备的样品晶粒继续长大，虽然摇摆曲线半高宽变大，但光致发光谱（PL）带边发射峰半高宽仅为105meV，比在350℃，500℃下制备的样品小1／5

Nonpolar alpha-plane (11 (2) over bar0) ZnO films were successfully grown on (302) gamma-LiAlO2 substrate by pulsed laser deposition. When the temperature of the substrate was 350 degrees C, the film was mix-oriented( a and 0 with a wide distribution of crystal grain size, and the c-plane ZnO was dominant. When the temperature of the substrate was 500 degrees C, pure (11 (2) over bar0) ZnO film was formed, with the FWHM of ZnO (11 (2) over bar0) rocking curve similar to 0. 65 degrees and the grain size distribution narrowed. Its in-plane anisotropy was demonstrated by polarized transmission spectrum. The FWHM of the peak of near band emission in the PL spectra was found to be only 105 meV for the sample with substrate temperature of 650 degrees C indicating the large size and uniform distribution of crystal grains which was also confirmed by AFM.