Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots
| Data(s) |
2009
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| Resumo |
We obtain low-density charged InAs quantum dots with an emission wavelength below 1 mu m using a low InAs growth rate. The quantum dots have a bimodal size distribution with an emission wavelength of around 1340 nm and 1000 nm, respectively. We observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77 K. National Natural Science Foundation of China 60625405 10734060National Basic Research Program of China 2006CB921504 Supported by the National Natural Science Foundation of China under Grant Nos 60625405 and 10734060, and the National Basic Research Program of China under Grant No 2006CB921504. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wang, HL (Wang Hai-Li); Xiong, YH (Xiong Yong-Hua); Huang, SS (Huang She-Song); Ni, HQ (Ni Hai-Qiao); He, ZH (He Zhen-Hong); Dou, XM (Dou Xiu-Ming); Niu, ZC (Niu Zhi-Chuan) .Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots ,CHINESE PHYSICS LETTERS,OCT 2009 ,26(10):Art.No.107801 |
| Palavras-Chave | #半导体物理 #1.3 MU-M |
| Tipo |
期刊论文 |
