Pt/Si界面反应与肖特基势垒形成的研究

详细研究了Pt/Si和Pt硅化物/Si界面的反应性质、原子结构及杂质/缺陷分布，讨论了它们对肖特基势垒的形成、势垒特性和势垒高度的影响。

硅化物形成条件对Pt硅化物/硅势垒的影响

对PtSi/N-Si和PtSi/P-Si两种肖特基势垒的形成条件与势垒高度之间的关系进行了详细研究。从理论上分析了在退火过程中引入的影响肖特基势垒特性的各种因素，同时指出了获得理想肖特基势垒的退火条件。

Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火

于2010-11-23批量导入

退火气氛中痕量氧在反应形成pt硅化物中的作用

于2010-11-23批量导入

Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate

Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.