Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate


Autoria(s): Wu J; Zeng YP; Cui LJ; Zhu ZP; Wang BX; Wang ZG
Data(s)

2002

Resumo

Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.

Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.

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Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; Chinese Acad Sci.; Chinese Acad Engn.; Gove Shaanxi Province & Xian City.; China Electr Mat Assoc.; China Assoc Sci & Technol.

Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China; Chinese Acad Sci, Inst Semicond, Ctr Semicond Mat, Beijing 100083, Peoples R China

Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; Chinese Acad Sci.; Chinese Acad Engn.; Gove Shaanxi Province & Xian City.; China Electr Mat Assoc.; China Assoc Sci & Technol.

Identificador

http://ir.semi.ac.cn/handle/172111/14879

http://www.irgrid.ac.cn/handle/1471x/105157

Idioma(s)

英语

Publicador

WORLD SCIENTIFIC PUBL CO PTE LTD

JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE

Fonte

Wu J; Zeng YP; Cui LJ; Zhu ZP; Wang BX; Wang ZG .Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate .见:WORLD SCIENTIFIC PUBL CO PTE LTD .INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29),JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE ,2002,4423-4426

Palavras-Chave #半导体材料 #INP(001) #EPITAXY #GAAS
Tipo

会议论文