Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate
Data(s) |
2002
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Resumo |
Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires. Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:09导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:09Z (GMT). No. of bitstreams: 1 2834.pdf: 1237251 bytes, checksum: 3612f52bb5412cafcc46f262f83f0733 (MD5) Previous issue date: 2002 Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; Chinese Acad Sci.; Chinese Acad Engn.; Gove Shaanxi Province & Xian City.; China Electr Mat Assoc.; China Assoc Sci & Technol. Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China; Chinese Acad Sci, Inst Semicond, Ctr Semicond Mat, Beijing 100083, Peoples R China Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; Chinese Acad Sci.; Chinese Acad Engn.; Gove Shaanxi Province & Xian City.; China Electr Mat Assoc.; China Assoc Sci & Technol. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
WORLD SCIENTIFIC PUBL CO PTE LTD JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE |
Fonte |
Wu J; Zeng YP; Cui LJ; Zhu ZP; Wang BX; Wang ZG .Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate .见:WORLD SCIENTIFIC PUBL CO PTE LTD .INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29),JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE ,2002,4423-4426 |
Palavras-Chave | #半导体材料 #INP(001) #EPITAXY #GAAS |
Tipo |
会议论文 |