Defect influence on luminescence efficiency of GaN-based LEDs

Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 Elsevier Ltd. All rights reserved.

Line defect splitters for self-collimated beams in photonic crystals

A one-to-two splitter for self-collimated beams in photonic crystal (PC) is designed by inserting one row of line defects. Finite-difference time-domain (FDTD) method is used to simulate the light propagation process. Our systematical studies show that the splitting ratio is a function of the airholes size of the line defect radius, and stays fairly constant as a function of frequency. Furthermore, it is shown the numerical results can be analyzed by coupled-mode theory. (C) 2005 Elsevier B.V. All rights reserved.

Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons. the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.

Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers

Nanocrystalline Ge embedded in amorphous silicon dioxide matrix was fabricated by oxidizing hydrogenated amorphous Si/hydrogenated amorphous Ge (a-Si:H/a-Ge:H) multilayers. The structures before and after oxidation were systematically investigated. The orange-green light emission was observed at room temperature and the luminescence peak was located at 2.2 eV. The size dependence in the photoluminescence peak energy was not observed and the luminescence intensity was increased gradually with oxidation time. The origin for this visible light emission is discussed. In contrast to the simple quantum effect model, the surface defect states of nanocrystalline Ge are believed to play an important role in radiative recombination process. (C) 1999 American Institute of Physics. [S0003-6951(99)02425-0].

Ge related defect energy and microcavity effect in GaN epitaxial layer

Using solid-phase regrowth technique, Pd/Ge contact has been made on the GaN layer, and very good ohmic behavior was observed for the contact. The Photoluminescence (PL) spectra for different structures formed by the Pd/Ge contact, GaN layer, sapphire substrate, and mirror were studied, and a defect-assisted transition was found at 450 nm related to Ge impurity. The results show that the microcavity effect strongly influences the PL spectra of the band-gap and defect-assisted transitions.

Experimental investigation of slow light phenomenon in photonic crystal waveguide line defect laser

The guide mode whose frequency locates in the band edge in photonic crystal single line defect waveguide has very low group velocity. So the confinement and gain of electromagnetic field in the band edge are strongly enhanced. Photonic crystal waveguide laser is fabricated and the slow light phenomenon is investigated. The laser is pumped by pulsed pumping light at 980nm whose duty ratio is 0.05%. The active layer in photonic crystal slab is InGaAsP multiple quantum well. Light is transimited by a photonic crystal chirp waveguide in one facet of the laser. Then the output light is coupled to a fiber and the character of laser is analysis by an optical spectrometer. It is found that single mode and multimode happens with different power of pumping light. Meanwhile the plane wave expansion and finite-difference time-domain methods are used to simulate the phenomenon of slow light. And the result of the experiment is compared with the theory which proves the slow light results in lasing oscillation.

Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration

Fe-doped semi-insulating (SI) InP has become semi-conducting (SC) material completely after annealing at 900 V for 10 hours. Defects in the SC and SI InP materials have been studied by deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) respectively. The DLTS only detected Fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the SC-InP TSC results confirmed the nonexistence of deep level defects in the annealed SI-InP. The results demonstrate a significant influence of the thermally induced defects on the electrical properties of SI-InP. The formation mechanism and the nature of the shallow donor defect have been discussed based on the results.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

Defect influence on luminescence efficiency of GaN-based LEDs

Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 Elsevier Ltd. All rights reserved.

An Accurate and Fast Behavioral Model for PLL Frequency Synthesizer Phase Noise/Spurs Prediction

This paper presents a behavior model for PLL Frequency Synthesizer. All the noise sources are modeled with noise voltages or currents in time-domain. An accurate VCO noise model is introduced, including both thermal noise and 1/f noise. The behavioral model can be co-simulated with transistor level circuits with fast speed and provides more accurate phase noise and spurs prediction. Comparison shows that simulation results match very well with measurement results.

Donor defect in P-diffused bulk ZnO single crystal

A high concentration of shallow donor defect is formed in P-diffused ZnO single crystals. X-ray photoelectron spectroscopy analysis indicates that P atom occupy different lattice site at different diffusion temperature. Nature of the donor defect has been discussed.

Phase-locked ring-defect photonic crystal vertical-cavity surface-emitting laser

Phase-locked oxide-confined ring-defect photonic crystal vertical-cavity surface-emitting laser is presented. The coupled-mode theory is employed to illustrate the two supermodes of the device, in-phase and out-of-phase supermode. Experimental results verify the two supermodes by the characteristics of the spectra and the far field patterns. At the lower current, only the out-of-phase supermode is excited, whereas under the higher current, the in-phase supermode also appears at the shorter wavelength range. In addition, the measured spectral separation between the two supermodes agrees well with the theoretical result.

Comparing the Performance of Biomimetic Pattern Recognition with W8 and SVM on Prediction of Horizontal Gene Transfers in Bacteria Genomes

National Natural Science Foundation of China 60753001

A Structured Prediction Approach for Statistical Machine Translation

We propose a new formally syntax-based method for statistical machine translation. Transductions between parsing trees are transformed into a problem of sequence tagging, which is then tackled by a search- based structured prediction method. This allows us to automatically acquire transla- tion knowledge from a parallel corpus without the need of complex linguistic parsing. This method can achieve compa- rable results with phrase-based method (like Pharaoh), however, only about ten percent number of translation table is used. Experiments show that the structured pre- diction approach for SMT is promising for its strong ability at combining words.

Species transformation of trace elements and their distribution prediction in dyestuff residue incineration

The release of heavy metals from the combustion of hazardous wastes is an environmental issue of increasing concern. The species transformation characteristics of toxic heavy metals and their distribution are considered to be a complex problem of mechanism. The behavior of hazardous dyestuff residue is investigated in a tubular furnace under the general condition of hazardous waste pyrolysis and gasfication. Data interpretation has been aided by parallel theoretical study based on a thermodynamic equilibrium model based on the principle of Gibbs free energy minimization. The results show that Ni, Zn, Mn, and Cr are more enriched in dyestuff residue incineration than other heavy metals (Hg, As, and Se) subjected to volatilization. The thermodynamic model calculation is used for explaining the experiment data at 800 degrees C and analyzing species transformation of heavy metals. These results of species transformation are used to predict the distribution and emission characteristics of trace elements. Although most trace element predictions are validated by the measurements, cautions are in order due to the complexity of incineration systems.