Defect influence on luminescence efficiency of GaN-based LEDs
| Data(s) |
2006
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|---|---|
| Resumo |
Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 Elsevier Ltd. All rights reserved. Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 Elsevier Ltd. All rights reserved. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China; Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China; Natl Inst Mat Sci, Tsukuba, Ibaraki, Japan; Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
ELSEVIER SCI LTD THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND |
| Fonte |
Li, SP (Li, Shuping); Fang, ZL (Fang, Zhilai); Chen, HY (Chen, Hangyang); Li, JC (Li, Jinchai); Chen, XH (Chen, Xiaohong); Yuan, XL (Yuan, Xiaoli); Sekiguchi, T (Sekiguchi, Takashi); Wang, QM (Wang, Qiming); Kang, JY (Kang, Junyong) .Defect influence on luminescence efficiency of GaN-based LEDs .见：ELSEVIER SCI LTD .MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND ,FEB-JUN 2006,9 (1-3): 371-374 |
| Palavras-Chave | #光电子学 #defects |
| Tipo |
会议论文 |
