Defect influence on luminescence efficiency of GaN-based LEDs
| Data(s) |
2006
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|---|---|
| Resumo |
Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 Elsevier Ltd. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong) .Defect influence on luminescence efficiency of GaN-based LEDs ,MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2006 ,9(1-3):371-374 |
| Palavras-Chave | #光电子学 #defects #GaN #luminescence efficiency #LED |
| Tipo |
期刊论文 |
