Donor defect in P-diffused bulk ZnO single crystal
| Data(s) |
11/10/2010
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| Resumo |
A high concentration of shallow donor defect is formed in P-diffused ZnO single crystals. X-ray photoelectron spectroscopy analysis indicates that P atom occupy different lattice site at different diffusion temperature. Nature of the donor defect has been discussed. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-10-11T07:33:04Z No. of bitstreams: 1 Donor defect in P-diffused bulk ZnO single crystal.pdf: 328954 bytes, checksum: c08258735f4ce99e567f69a9c2b8a868 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-10-11T07:33:19Z (GMT) No. of bitstreams: 1 Donor defect in P-diffused bulk ZnO single crystal.pdf: 328954 bytes, checksum: c08258735f4ce99e567f69a9c2b8a868 (MD5) Made available in DSpace on 2010-10-11T07:33:19Z (GMT). No. of bitstreams: 1 Donor defect in P-diffused bulk ZnO single crystal.pdf: 328954 bytes, checksum: c08258735f4ce99e567f69a9c2b8a868 (MD5) 其它 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhao YW (Zhao Youwen), Zhang R (Zhang Rui), Zhang F (Zhang Fan), Dong ZY (Dong Zhiyuan), Yang J (Yang Jun).Donor defect in P-diffused bulk ZnO single crystal.见:29th International Conference on Physics of Semiconductors.Rio de Janeiro, BRAZIL.2009. |
| Palavras-Chave | #半导体材料 #Zinc Oxide #doping #defect |
| Tipo |
会议论文 |
