641 resultados para Sio2


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The single- and multi-shot damage behaviors of HfO2/SiO2 high-reflecting (HR) coatings under Nd:YAG laser exposure were investigated. Fundamental aspects of multi-shot laser damage, such as the instability due to pulse-to-pulse accumulation of absorption defect and structural defect effect, and the mechanism of laser induced defect generation, are considered. It was found in multi-shot damage, the main factors influencing laser-induced damage threshold (LIDT) are accumulation of irreversible changes of structural defects and thermal stress that induced by thermal density fluctuations.

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对以K9玻璃为基底,采用ZrO2和SiO2为高低膜料来制备棱镜偏振膜,并进行膜系优化设计。设计指标为:波长540nm处满足Tp>99%,Ts<1%。优化结果表明,膜系以H3L(HL)^13 H3LH为最佳膜系。测试结果表明,此膜系完全满足设计指标,偏振性能优良。探讨了参考波长对偏振膜工作带宽的影响。

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研究了Ta2O5/SiO2硬膜双腔干涉滤光片带内、带边及带外的吸收和激光损伤特性。实验发现,对于作用激光,带通滤光片的驻波场分布、吸收率和损伤阈值在带内、带边和带外的响应特性对作用激光波长均呈现出明显的选择性。根据实验结果,结合滤光片的驻波场分析,给出了带通滤光片的损伤机理。

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本文主要研究了真空中有机污染物对薄膜阈值的影响。采用电子枪蒸镀的方式制备了由TiO2/SiO2两种材料组合而成的1064nm高反膜,分别在大气和真空中对其损伤阈值进行了测量。发现在真空中污染物易黏附于光学元件表面,导致损伤;真空中的氧分子会加速损伤过程,根据破斑形貌的分析认为是由于在激光作用下氧分子与有机污染物发生反应造成的;真空中的有机污染物被去除后,真空和大气中的损伤阈值差别不大,破斑形貌相似。结果表明有机污染物是真空中损伤阈值降低的主要原因。

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HfO2 single layers, 800 run high-reflective (HR) coating, and 1064 ran HR coating were prepared by electron-beam evaporation. The laser-induced damage thresholds (LIDTs) and damage morphologies of these samples were investigated with single-pulse femtosecond and nanosecond lasers. It is found that the LIDT of the HfO2 single layer is higher than the HfO2-SiO2 HR coating in the femtosecond regime, while the situation is opposite in the nanosecond regime. Different damage mechanisms are applied to study this phenomenon. Damage morphologies of all samples due to different laser irradiations are displayed. (c) 2007 Optical Society of America.

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The high reflection (HR) mirror composed of dielectric stacks with excellent spectrum characteristics and high damage resistant ability is critical for fabricating multilayer dielectric (MLD) grating for pulse compressor. The selection of the SiO2 material as the top layer of the HR mirror for grating fabrication is beneficial for improving the laser-induced damage threshold of MLD grating as well as minimizing the standing-wave effect in the photoresist during the exposure process. Based on an (HLL) H-9 design comprising quarter-waves of HfO2 ( H) and half-waves of SiO2 ( L), we obtain an optimal design of the HR mirror for MLD grating, the SiO2 top layer of which is optimized with a merit function including both the diffraction efficiency of the MLD grating and the electric field enhancement in the grating. Dependence of the performance of the MLD grating on the fabrication error of the dielectric mirror is analysed in detail. The HR mirror is also fabricated by E-beam evaporation, which shows good spectral characteristics at the exposure wavelength of 413 nm and at the operation wavelength of 1053 nm and an average damage threshold of 10 J cm(-2) for a 12 ns pulse.

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Two kinds of HfO2/SiO2 800 nm high-reflective (HR) coatings, with and without SiO2 protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO2 protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO2 protective layer for HfO2/SiO2 HR coating with SiO2 protective layer. The relation of LIDT for two kinds of HfO2/SiO2 HR coatings in calculation agrees with the experiment result. (c) 2006 Elsevier B.V. All rights reserved.

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The mechanism of improving 1064 nm, 12 ns laser-induced damage threshold (LIDT) of TiO2/SiO2 high reflectors (HR) prepared by electronic beam evaporation from 5.1 to 13.1 J/cm(2) by thermal annealing is discussed. Through optical properties, structure and chemical composition analysis, it is found that the reduced atomic non-stoichiometric defects are the main reason of absorption decrease and LIDT rise after annealing. A remarkable increase of LIDT is found at 300 degrees C annealing. The refractive index and film inhomogeneity rise, physical thickness decrease, and film stress changes from compress stress to tensile stress due to the structure change during annealing. (c) 2007 Elsevier B.V. All rights reserved.

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研究了电子束蒸发制备的HfO2/SiO2高反膜在1064nm与532nm激光辐照下的损伤行为。基频激光辐照时损伤形貌主要为节瘤缺陷喷溅留下的锥形坑。当能量密度较大时出现分层剥落;二倍频激光损伤主要是由电子缺陷引起的平底坑,辐照脉冲能量密度稍高时也会产生吸收性缺陷引起的锥形坑,但电子缺陷的损伤阈值更低;随着辐照脉冲能量密度的增大分层剥落逐渐成为主要的损伤形貌。分析认为,辐照激光波长的变化。引起吸收机制的变化从而导致了损伤阈值及损伤机制的差异。

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用电子束蒸发方法在BK7基底上沉积了HfO2/SiO2多层膜。研究了200℃到400℃的退火对残余应力的影响。结果表明退火前的薄膜残余应力为压应力,在200℃退火后发展为张应力,然后张应力值随着退火温度的升高而增大。在400℃退火后,由于张应力太大,薄膜表面出现了裂纹。同时,随着退火温度的升高,晶粒尺寸长大,晶面间距降低。残余应力的变化与结构的演变相对应。

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Ta2O5薄膜采用传统的电子束蒸发方法沉积在BK7基底上。文中对SiO2保护层和退火对Ta2O5薄膜的激光损伤阈值的不同影响进行了研究。结果表明,SiO2保护层不会影响薄膜内的电场分布,薄膜微结构和微缺陷密度,但是会使薄膜的吸收稍微增大;而退火对降低薄膜的微缺陷密度和吸收较有效。SiO2保护层和退火都有利于提高Ta2O5薄膜的抗激光损伤能力,并且退火对提高阈值的影响更为明显。此外,采用SiO2保护层和退火结合的方法,获得了具有最大激光损伤阈值的薄膜。

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TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.