Effects of annealing on laser-induced damage threshold of TiO2/SiO2 high reflectors
Data(s) |
2007
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Resumo |
The mechanism of improving 1064 nm, 12 ns laser-induced damage threshold (LIDT) of TiO2/SiO2 high reflectors (HR) prepared by electronic beam evaporation from 5.1 to 13.1 J/cm(2) by thermal annealing is discussed. Through optical properties, structure and chemical composition analysis, it is found that the reduced atomic non-stoichiometric defects are the main reason of absorption decrease and LIDT rise after annealing. A remarkable increase of LIDT is found at 300 degrees C annealing. The refractive index and film inhomogeneity rise, physical thickness decrease, and film stress changes from compress stress to tensile stress due to the structure change during annealing. (c) 2007 Elsevier B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
姚建可;邵建达;贺洪波;范正修.,Appl. Surf. Sci.,2007,253(22):8911-8914 |
Palavras-Chave | #光学薄膜 #annealing #TiO2/SiO2 high reflectors #absorption #laser damage #x-ray photoelectron spectroscopy |
Tipo |
期刊论文 |