Microstructure studies of PdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing

A low resistance and shallow ohmic contact to n-GaAs is performed by using Ge/Pd/GaAs trilayer structure and rapid thermal annealing process. The dependence of specific contact resistivity on the temperature of rapid thermal annealing is investigated. A good ohmic contact is formed after annealing at 400-500 degrees C for 60 s. The best specific contact resistivity is 1.4 x 10(-6) Omega cm(2). Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) are used to analyze the interfacial microstructure. A strong correlation between the contact resistance and the film microstructure is observed.

Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer

The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed. (C) 1996 American Institute of Physics.

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.

Sidegating effect on Schottky contact in ion-implanted GaAs

The sidegating effect on the Schottky barrier in ion-implanted GaAs was investigated with capacitance-voltage profiling at various negative substrate voltages. It was demonstrated that the negative substrate voltage modulates the Schottky depletion region width as well as the space charge region at the substrate-active channel interface. (C) 1995 American Institute of Physics.

SiC Schottky结反向特性的研究

对Ti/6H-SiC Schottky结的反向特性进行了测试和理论分析,提出了一种综合的包括SiC Schottky结主要反向漏电流产生机理的反向隧穿电流模型,该模型考虑了Schottky势垒不均匀性、Ti/SiC界面层电压降和镜像力对SiC Schottky结反向特性的影响,模拟结果和测量值的相符说明了以上所考虑因素是引起SiC Schottky结反向漏电流高于常规计算值的主要原因.分析结果表明在一般工作条件下SiC Schottky结的反向特性主要是由场发射和热电子场发射电流决定的.

6H—SiC Schottky二极管的正向特性

提出了一种考虑Schottky结势垒不均匀性和界面层作用的SiC Schottky二极管(SBD)正向特性模型，势垒的不均匀性来自于SiC外延层上的各种缺陷，而界面层上的压降会使正向Schottky结的有效势垒增高．该模型能够对不同温度下SiC Schottky结正向特性很好地进行模拟，模拟结果和测量数据相符．它更适用于考虑器件温度变化的场合，从机理上说明了理想因子、有效势垒和温度的关系．

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Metal-semiconductor-metal (MSM) structures were fabricated by RF-plasma-assisted MBE using different buffer layer structures. One type of buffer structure consists of an AlN high-temperature buffer layer (HTBL) and a GaN intermediate temperature buffer layer (ITBL), another buffer structure consists of just a single A IN HTBL. Systematic measurements in the flicker noise and deep level transient Fourier spectroscopy (DLTFS) measurements were used to characterize the defect properties in the films. Both the noise and DLTFS measurements indicate improved properties for devices fabricated with the use of ITBL and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (C) 2003 Elsevier Ltd. All rights reserved.

Ti Schottky barrier diodes on n-type 6H-SiC

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.

Schottky探针研制与测试研究

利用Schottky质谱仪进行远离β稳定线核质量测量研究是九五国家大科学工程兰州重离子加速器冷却储存环上的一个重要研究方向.简要分析了Schottky探针的工作原理和利用Schot tky质谱仪进行质量测量,给出了对用于HIRFL CSR束流诊断与测量的Schottky探针的研制与测试结果.

CSRe Schottky 质量谱仪研究

HIRFL-CSR 联合Schottky信号诊断的方法为高精度测量离子质量提供了一个新的途径，本论文研究了CSRe Schottky 质量谱仪的原理,电子冷却模式下进行质量测量时的磁铁设置，各种系统误差以及能达到的精度估计。首先研究了CSRe的线性lattice中动量压缩因子对动量色散的依赖，以及动量压缩因子的高阶项的存在会对常用的线性质量刻度造成多大的系统误差。讨论了利用六级铁的适当设置减小这种系统误差的方法，给出利用MAD程序的模拟的CSRe六级铁的适当设置数值以及动量压缩因子对动量分散的依赖曲线。接着详细讨论了其他的几种主要的系统误差以及消除方法，给出了一种新的准确度更高的非线性的质量刻度方法。最后研究了电子冷却模式下CSRe Schottky质量谱仪精度的决定因素，调研了在CSRe上进行对190Ir和188Os可行性以及估计了在现有条件下，能够达到的精度,探讨了进一步提高质量刻度的精度和准确度的实现途径

核质量测量与Schottky探针研究

本文研究了用于九五国家大科学工程“兰州重离子加速器冷却储存环HIRFL-CSR”上的Schottky探针及利用schottky质谱仪进行核质量测量，研究了当前国际上核质量测量研究方法并结合当前的核质量测量研究现状，根据CSR能提供的实验条件，研究认为在HIRFL-CSR上利用Schttkv质谱仪方法进行核质量测量有很广阔的前景。根据HIRFL-CSR束流参数和束诊要求，设计了schottky探针电极及超高真空Schottky探针安装靶室。利用三维电磁场模拟计算程序MAFIA优化了Schottky探针的结构和形状。通过改变电极板的边缘场矫正板的长度和角度，在极板间获得了最佳的场分布。模拟结果表明对水平和垂直方向的探针矫正板长度分别为4cm、3cm并且夹角分别为30、20度时在探针极板间可得到很好的横向匀场。对Schottky样机的信号响应进行的仔细的测试，获得了较满意的结果。本文还研究了利用Schottky质谱仪进行核质量测量的Schottky信号处理方法与质量测量原理，对当前远离β稳定线的核质量测量前景做了仔细分析。对Schottky探针用于CSR的束流参数测量和核质量测量方法进行了较深入的探讨。

General Solution to Two-Dimensional Nonslipping JKR Model with a Pulling Force in an Arbitrary Direction

In this paper, a generalized JKR model is investigated, in which an elastic cylinder adhesively contacts with an elastic half space and the contact region is assumed to be perfect bonding. An external pulling force is acted on the cylinder in an arbitrary direction. The contact area changes during the pull-off process, which can be predicted using the dynamic Griffith energy balance criterion as the contact edge shifts. Full coupled solution with an oscillatory singularity is obtained and analyzed by numerical calculations. The effect of Dundurs' parameter on the pull-off process is analyzed, which shows that a nonoscillatory solution can approximate the general one under some conditions, i.e., larger pulling angle (pi/2 is the maximum value), smaller a/R or larger nondimensional parameter value of Delta gamma/E*R. Relations among the contact half width, the external pulling force and the pulling angle are used to determine the pull-off force and pull-off contact half width explicitly. All the results in the present paper as basic solutions are helpful and applicable for experimenters and engineers.