257 resultados para High refractive index


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采用1/4规整膜系,从电场强度、吸收损耗及散射损耗的分布几个方面,对影响193 nm反射膜性能的因素进行了分析。以分析结果为基础,对低损耗193 nm反射膜的设计进行了探讨。结果表明:在空气侧的外膜层中电场强度较大,随着层数向内过渡,电场强度迅速减小;高折射率材料膜层的吸收损耗明显高于低折射率材料膜层的吸收损耗,而且靠近空气侧最外层的高折射率膜层的吸收损耗最大;按由外层向内层过渡的方向,吸收损耗迅速减小,减小的速度与高低折射率材料折射率的比值相关;表面散射损耗与两种材料的折射率比值成正比,但折射率比值减小后只能通过增加膜层数来获得一定的反射率,而这样又会使表面粗糙度增加,并且引入其它的损耗。因此,选择折射率差值适当大一些的材料对降低散射损耗是有利的。设计了27层膜堆的193 nm反射膜,设计反射率在98%以上。

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Influence of ZrO2 in HfO2 on the reflectance of HfO2/SiO2 multilayer at 248 nm was investigated. Two kinds of HfO2 with different ZrO2 content were chosen as high refractive index material and the same kind of SiO2 as low refractive index material to prepare the mirrors by electron-beam evaporation. The impurities in two kinds of HfO2 starting coating materials and in their corresponding single layer thin films were determined through glow discharge mass spectrum (GDMS) technology and secondary ion mass spectrometry (SIMS) equipment, respectively. It showed that between the two kinds of HfO2, either the bulk materials or their corresponding films, the difference of ZrO2 was much larger than that of the other impurities such as Ti and Fe. It is the Zr element that affects the property of thin films. Both in theoretical and in experimental, the mirror prepared with the HfO2 starting material containing more Zr content has a lower reflectance. Because the extinction coefficient of zirconia is relatively high in UV region, it can be treated as one kind of absorbing defects to influence the optical property of the mirrors. (C) 2008 Elsevier B.V. All rights reserved.

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HfO2 is one of the most important high refractive index materials for depositing high power optical mirrors. In this research, HfO2 thin films were prepared by dual-ion beam reactive sputtering method, and the laser-induced damage thresholds (LIDT) of the sample were measured in 1-on-1 mode for laser with 1064 nm wavelength. The results indicate that the LIDT of the as-grown sample is only 3.96 J/cm(2), but it is increased to 8.98 J/cm(2) after annealing under temperature of 200 degrees C in atmosphere. By measuring the laser weak absorption and SIMS of the samples, we deduced that substoichiometer is the main reason for the low LIDT of the as-grown sample, and the experiment results were well explained with the theory of electronic-avalanche ionization. (C) 2008 Elsevier B.V. All rights reserved.

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Quality factor enhancement due to mode coupling is observed in a three-dimensional microdisk resonator. The microdisk, which is vertically sandwiched between air and a substrate, with a radius of 1 mu m, a thickness of 0.2 mu m, and a refractive index of 3.4, is considered in a finite-difference time-domain (FDTD) numerical simulation. The mode quality factor of the fundamental mode HE71 decreases with an increase of the refractive index of the substrate, n(sub), from 2.0 to 3.17. However, the mode quality factor of the first-order mode HE72 reaches a peak value at n(sub) = 2.7 because of the mode coupling between the fundamental and the first-order modes. The variation of mode field distributions due to the mode coupling is also observed. This mechanism may be used to realize high-quality-factor modes in microdisks with high-refractive-index substrates. (c) 2006 Optical Society of America.

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Liquid-filled microstructured polymer optical fibers (MPOFs) as monolithic liquid-core array fiber are proposed and prepared by injecting high-refractive-index liquid into the holes array of the MPOFs. One example for potential applications is demonstrated as a new kind of coherent imaging fiber. It provides great potential for applications in chemical sensing, biosensors, and endoscopy, particularly in bifunctional detection. (C) 2009 Optical Society of America

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A series of cerium dioxide (CeO2,)/polyimide (PI) nanocomposites were successfully prepared from Ce(Phen)(3) and polyamic acid (PAA) via the solution direct-dispersing method, followed by a step thermal imidization process. TGA and XPS studies showed that the cerium complex decomposed to form CeO2, during the thermal imidization process at 300 degrees C. SEM observation showed that the formed CeO2, as nalloparticles was well dispersed in polyimide matrix with a size of about 50-100 nm for samples with different contents of CeO2. Thermal analysis indicated that the introduction of CeO2, decreased the thermal stability of nanocomposite films due to the decomposition of Ce(Phen)(3) in the imidization process, while the glass transition temperature (T-g) increased obviously. especially nanocomposite films with high loading of CeO2 exhibited a trend of disappearance off, DMTA and static tensile measurements showed that the storage modulus of nanocomposite films increased, while the elongation at break decreased with increasing CeO2 content.

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New parasitic lasing suppression techniques are developed and high gain amplification is demonstrated in a petawatt level Ti:sapphire amplifier based on the chirped pulse amplification (CPA) scheme. Cladding the large aperture Ti: sapphire with refractive-index matched liquid doped with absorber suppresses the transverse lasing. The acousto-optic programmable dispersive filter (AOPDF) is used to realize side-lobe suppression in the temporal profile of the compressed pulse. The 800 nm laser output with peak power of 0.89 PW and pulse width of 29.0 fs is demonstrated. (c) 2007 Optical Society of America.

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Smooth thin films of three kinds of nickel(II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on K9 glass substrate in the 300-600 nn wavelength region were measured. Optical constants (complex refractive index N = n + ik) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants epsilon (epsilon = epsilon(1) + i epsilon(2)), absorption coefficients a as well as reflectance R of thin films were then calculated at 405 nm. In addition, in order to examine the possible use of nickel(II)-azo complex thin film as an optical recording medium, one of the nickel(II)-azo complex thin film prepared on K9 glass substrate with an Ag reflective layer was also studied by atomic force microscopy and static optical recording. The results show that the nickel(II)-azo complex thin film is smooth and has a root mean square surface roughness of 2.25 nm, and the recording marks on the nickel(II)-azo complex thin film are very clear and circular, and their size can reach 200 nn or less. (c) 2006 Elsevier Ltd. All rights reserved.

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(100 - x)TeO2 - xNb(2)O(5) (x=5-20) mobic tellurite glasses doped with 0.5 mol.% Er2O3 were synthesized, and their thermal, mechanical, and spectroscopic properties were measured and compared to the properties of the typical 75TeO(2)-20ZnO-5Na(2)O (TZN) tellurite glass. The refractive index (n(d)), density (p), and glass transition temperature (T-g) of bulk glasses increase with the Nb2O5 content. The Vickers microhardness (H-v) of bulk glass in niobic tellurite glasses also increases with the Nb2O5 content. The values (2.5-3.2 GPa) of H, in the niobic tellurite glasses are 47-88% larger than that (1.7 GPa) in TZN glass. The effect of Nb2O5 content on absorption spectra, the Judd-Ofelt parameters Omega(t) (t = 2, 4, 6), fluorescence spectra and the lifetimes of Er3+ :I-13/2 level were also investigated, and the stimulated emission crosssection was calculated from McCumber theory. With increasing Nb2O5 content in the glass composition, the Omega(t) (t = 2, 4, 6) parameters, fluorescence full width at half maximum (FWHM) Of I-13/2 of Er3+ increase, while the I-4(13/2) lifetimes of Er3+ decreases. Compared with TZN glass, the gain bandwidth properties of Er3+-doped TeO2-Nb2O5 glass is much larger than in tellurite glass based TeO2-ZnO-Na2O system, bismush-based glass, germanate, and silicate glasses, which indicates that TeO2-Nb2O5 glasses are better choice as a practical available host material for broadband Er3+-doped amplifier. (c) 2005 Elsevier B.V. All rights reserved.

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HfO2 films were deposited by electron beam evaporation with different deposition parameters. The properties such as refractive index, weak absorption, and laser induced damage thresholds (LIDTs) of these films have been investigated. It was found that when pulsed Nd:YAG 1064 nm laser is used to investigate LIDT of films: Metallic character is the main factor that influences LIDTs of films obtained from Hf starting material by ion-assisted reaction, and films prepared with higher momentum transfer parameter P have fewer metallic character; The ion-assisted reaction parameters are key points for preparing high LIDT films and if the parameters are chose properly, high LIDT films can be obtained. (c) 2004 Elsevier B.V. All rights reserved.

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The mechanism of improving 1064 nm, 12 ns laser-induced damage threshold (LIDT) of TiO2/SiO2 high reflectors (HR) prepared by electronic beam evaporation from 5.1 to 13.1 J/cm(2) by thermal annealing is discussed. Through optical properties, structure and chemical composition analysis, it is found that the reduced atomic non-stoichiometric defects are the main reason of absorption decrease and LIDT rise after annealing. A remarkable increase of LIDT is found at 300 degrees C annealing. The refractive index and film inhomogeneity rise, physical thickness decrease, and film stress changes from compress stress to tensile stress due to the structure change during annealing. (c) 2007 Elsevier B.V. All rights reserved.

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TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.

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The thermal stability of electron beam deposited TiO2 monolayers and TiO2/SiO2 high reflectors (HR) during 300 to 1100 degrees C annealing is studied. It is found that the optical loss of film increases with the increase in annealing temperature, due to the phase change, crystallisation and deoxidising of film. Scattering loss dominates the optical property degradation of film below 900 degrees C, while the absorption is another factor at 1100 degrees C. The increase in refractive index and decrease in physical thickness of TiO2 layer shift the spectra of HR above 900 degrees C. The possible crack mechanism on the surface of HR during annealing is discussed. Guidance for application on high temperature stable optical coatings is given.

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Coupled microcircular resonators tangentially coupled to a bus waveguide, which is between the resonators, are numerically investigated by the finite-difference time-domain technique. For symmetrically coupled microcircular resonators with refractive index of 3.2, radius of 2 mu m, and width of the bus waveguide of 0.4 mu m, a mode Q factor of the order of 105 is obtained for a mode at the frequency of 243 THz. An output coupling efficiency of as high as 0.99 is calculated for a mode with a Q factor ranging from 10(3) to 10(4). The mode Q factor is 2 orders larger than that of the modes confined in a single circular resonator tangentially coupled to the same bus waveguide. Furthermore, the high Q traveling modes in the coupled microcircular resonators are suitable for optical single processing.