High laser-induced damage threshold HfO2 films prepared by ion-assisted electron beam evaporation


Autoria(s): Zhang DW; Fan SH; Zhao YN; Gao WD; 邵建达; Fan RY; Wang YJ; 范正修
Data(s)

2005

Resumo

HfO2 films were deposited by electron beam evaporation with different deposition parameters. The properties such as refractive index, weak absorption, and laser induced damage thresholds (LIDTs) of these films have been investigated. It was found that when pulsed Nd:YAG 1064 nm laser is used to investigate LIDT of films: Metallic character is the main factor that influences LIDTs of films obtained from Hf starting material by ion-assisted reaction, and films prepared with higher momentum transfer parameter P have fewer metallic character; The ion-assisted reaction parameters are key points for preparing high LIDT films and if the parameters are chose properly, high LIDT films can be obtained. (c) 2004 Elsevier B.V. All rights reserved.

Identificador

http://ir.siom.ac.cn/handle/181231/4440

http://www.irgrid.ac.cn/handle/1471x/12797

Idioma(s)

英语

Fonte

Zhang DW;Fan SH;Zhao YN;Gao WD;邵建达;Fan RY;Wang YJ;范正修.,Appl. Surf. Sci.,2005,243(1~4):232-237

Palavras-Chave #光学薄膜 #HfO2 films #laser-induced damage threshold #ion-assisted reaction #weak absorption
Tipo

期刊论文