Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films
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2009
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Resumo |
HfO2 is one of the most important high refractive index materials for depositing high power optical mirrors. In this research, HfO2 thin films were prepared by dual-ion beam reactive sputtering method, and the laser-induced damage thresholds (LIDT) of the sample were measured in 1-on-1 mode for laser with 1064 nm wavelength. The results indicate that the LIDT of the as-grown sample is only 3.96 J/cm(2), but it is increased to 8.98 J/cm(2) after annealing under temperature of 200 degrees C in atmosphere. By measuring the laser weak absorption and SIMS of the samples, we deduced that substoichiometer is the main reason for the low LIDT of the as-grown sample, and the experiment results were well explained with the theory of electronic-avalanche ionization. (C) 2008 Elsevier B.V. All rights reserved. National Natural Science Foundation of China [60608020]; Shenzhen Government [200717]; Shenzhen University [200617] |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang Dongping;Wang Congjuan;Fan Ping;Cai Xingmin;Liang Guangxing;邵建达;范正修.,Appl. Surf. Sci.,2009,255(8):4646-4649 |
Palavras-Chave | #光学薄膜 #Thin film #Dual-ion-beam sputtering #Substoichiometer |
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期刊论文 |