INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING

The interaction of Co with Si and SiO2 during rapid thermal annealing has been investigated. Phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. With increasing annealing temperature, Co film on Si(100) is transformed sequentially into Co2Si, CoSi, and finally CoSi2 which corresponds to the minimum of sheet resistance. No evidence of silicide formation was observed for Co/SiO2 annealed even at the high temperature of 1050-degrees-C.

基于STM-64的甚短距离并行光传输系统

研究了STM-64数据帧的转换映射技术,利用垂直腔面发射激光器(VCSEL)列阵光源和PIN列阵探测器成功研制出10 Gb/s的甚短距离12信道SDH并行光传输系统,该系统结构紧凑,具有检错和纠错功能。跟传统的10 Gb/s串行光传输系统相比,本系统降低了对单路器件传输性能的要求。经SDH传输测试仪测试,系统能实现无误传输。

掺Er／Pr的GaN薄膜深能级的研究

利用深能级瞬态谱（DLTS）、傅里叶变换红外光谱（FT-IR）对GaN以及GaN掺Er／Pr的样品进行了电学和光学特性分析．研究发现未掺杂的GaN样品只在导带下0．270eV处有一个深能级；GaN注入Er经900℃，30min退火后的样品出现了四个深能级，能级位置位于导带下0．300eV，0．188eV，0．600eV和0．410eV；GaN注入Pr经1050℃，30min退火后的样品同样出现了四个深能级。能级位置位于导带下0．280eV，0．190eV，0．610eV和0．390eV；对每一个深能级的来源进行了讨论．光谱研究表明，掺Er的GaN样品经900℃，30min退火后，可以观察到Er的1538nm处的发光。而且对能量输运和发光过程进行了讨论．

掺镨GaN薄膜的微结构与光致发光

利用背散射／沟道（RBS／C）技术、原子力显微镜（AFM）和光致发光（PL）谱研究了掺镨GaN薄膜的微结构和可见光发光特性。RBS／C结果表明，注入Pr后，在注入层引入了晶格损伤；注入样品经1050℃退火后，部分损伤得到恢复，但是晶体质量没有恢复到注入前的状态。AFM结果表明，注入Pr后，表面凹凸不平，而且在注入区引起了膨胀，膨胀幅度达到23．368nm左右。PL结果表明，在850—1050℃退火，发光强度按e指数增加；当退火温度达到1050℃，发光强度最强，经过数据拟合可得Pr^3＋的热激活能为5．8eV。

GSMBE外延生长SGOI材料的退火行为

在SIMOX SOI超薄硅衬底上外延生长了高质量SiGe合金薄膜来制备SGOI(SiGe on insulator)样品，并研究了其在1050℃氧化气氛中的高温退火行为．用Raman，DCXRD，RBS和光学显微镜等分析手段对SGOI样品在退火前后的性能进行了表征．分析结果表明

预注入对Si_（1-x）C_x合金形成的影响

室温下在单晶Si中注入(0.6-1.5)at%的C原子，部分样品在C离子注入之前在其中注入~(29)Si~+离子产生损伤，然后在相同条件下利用高温退火固相外延了Si_(1-x)C_x合金，研究了预注入对Si_(1-x)C_x合金形成的影响。如果注入C离子的剂量小于引起Si非晶化的剂量，在950℃退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇，难于形成Si_(1-x)C_x合金，预注入形成的损伤有利于合金的形成。随着C离子剂量的增大，注入产生的损伤增强，预注入反而不利于Si_(1-x)C_x合金的形成，但当注入C原子的浓度超过固相外延的溶解度时，预注入的影响可以忽略。退火温度升高到1050℃，无论预注入还是未预注入样品，C含量低的合金相仍然保留，而C含量高的合金相大部分消失。

Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method

于2010-11-23批量导入

The effects of carbonized buffer layer on the growth of SiC on Si

Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

我国部分地区土壤环境背景值历史动态变化规律研究

以我国南方经济开发区。东北重工业区以及内蒙古草原区主要土壤类型为研究对象，分析近半个世纪以来不同历史时期土壤中Cu、Ni、Pb、Zn、Cd、As、Hg元素的背景值及其变化规律。结果表明，近半个世纪凤来，土壤金属元素背景值普遍存在变化。海拉尔草原区暗栗钙土近30年来Cu、Pb、Cd浓度相对稳定。As浓度有增加，而Ni、Zn、Hg浓度降低。上海郊区水稻土近10年As、Pb、Hg浓度呈现降低。南京东郊黄棕壤近50年来Cd、Hg浓度降低。Zn、Ni、Pb、As浓度升高。沈阳郊区草甸土，草甸棕壤及棕壤近30年来Pb、Zn、Cd、Cu浓度多呈升高，Hg浓度下降。各地区10—50年间土壤表层金属元素年变化率以上海、沈阳地区较大，海拉尔草原区相对较小。在2Km * 2Km面积上，草甸棕壤表土17个采样点间，7种金属元素浓度变异系数（%）分别为：Cd(33.1) > Hg(31.2) > Pb(11.3) > As(8.5) > Cu(8.3) > Zn(8.1) > Ni(7.2)。距该中心处不同距离的采样点间，各元素测定结果无显著差异（α = 0.01）。

CaⅢ等核及等电子系列离子3d波函数塌缩研究

利用HFR和LS-dependent(LS-D)的HFR自洽场方法,系统地计算了CaⅢ等核及等电子系列离子的3d电子径向波函数,分析了3d波函数的塌缩规律,揭示了3d波函数的塌缩与谱项的强烈依赖关系,并进一步讨论了由于3d波函数的塌缩引起的3p6→3p53d跃迁能和振子强度的变化.

The influence and chronological uncertainties of the 8.2 ka cooling event on continental climate records in China

IEECAS SKLLQG

改进的Glauber模型对奇异核反应总截面数据的拟合

利用Glauber模型对奇异核的反应总截面进行计算时 ,对模型进行了有限程修正和库仑修正 ,并对奇异核输入的密度采用了核芯加价核子的形式 ,使得理论与实验在中高能下都得到了很好的符合 .