Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method
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2000
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| Resumo |
于2010-11-23批量导入 zhangdi于2010-11-23 13:10:39导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:10:39Z (GMT). No. of bitstreams: 1 5421.pdf: 223738 bytes, checksum: e49b9049e192ef8ce3c4dfc144a7c33e (MD5) Previous issue date: 2000 中科院半导体所 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
林燕霞;黄大定;张秀兰;刘金平;李建平;高飞;孙殿照;曾一平;孔梅影.Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method,半导体学报,2000,21(11):1050 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
