The effects of carbonized buffer layer on the growth of SiC on Si

Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.

Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.

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Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China