Continuous-wave electrically injected InP/GaInAsP equilateral-triangle-resonator lasers

Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are fabricated using standard photolithography and inductively-coupled-plasma etching techniques. Continuous-wave electrically injected 1550 nm ETR laser with side length ranged from 15 to 30 tm are realized at room temperature.

Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well

The band structures of wurtzite ZnO are calculated using the empirical pseudopotential method (EPM). The 8 parameters of the Zn and O atom pesudopotential form factors with Schluter's formula are obtained. The effective mass parameters are extracted by using k.p Hamiltonian to fit the EPM results. The calculated band edge energies (E-g, E-A, E-B, and E-C) at Gamma point are in good agreement with experimental results. The ordering of ZnO at the top of valence band is found to be A(Gamma(7))-B(Gamma(9))-C(Gamma(7)) due to a negative spin-orbit (SO) splitting. Based on the band parameters obtained, the valence hole subbands of wurzite ZnO/MgxZn1-xO tensile-strained quantum wells (QWs) with different well widths and Mg compositions are calculated using 6-band k.p method. (c) 2005 Elsevier B.V. All rights reserved.

The develop of 622Mbits/s free space laser communication system

622Mbits/s free space laser communication system is developed. IT's communication rate is 622Mbits/s. The whole system include three parts which are signal in and out circuit laser driver and receive circuit and optical antenna The communication principle is introduced The experiment result shows that the transmission of data and image are satisfied with demands of design. It have a definite market value.

Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET

The mobility of channel electron, for partially depleted Sol nMOSFET in this paper, decreases with the increase of implanted fluorine dose in buried oxide layer. But, the experimental results also show that it is larger for the transistor corresponding to the lowest implantation dose than no implanted fluorine in buried layer. It is explained in tern-is of a "lubricant" model. Mien fluorine atoms are implanted in the top silicon layer, the mobility is the largest. In addition, a positive shift of threshold voltage has also been observed for the transistors fabricated on the Sol wafers processed by the implantation of fluorine. The causes of all the above results are discussed.

Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers

Ionizing radiation response of partially-depleted MOS transistors fabricated in the, fluorinated SIMOX wafers has been investigated. The experimental data show that the, radiation-induced threshold voltage shift of PMOSFETs and NMOSFETs, as well as the radiation-induced increase of off-state leakage current of NMOSFETs can be restrained by implanting fluorine ions into the buried oxide of SIMOX wafers.

Diffractive Grating Based Out-of-Plane Coupling between Silicon Nanowire and Optical Fiber

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T07:55:26Z No. of bitstreams: 1 Diffractive Grating Based Out-of-Plane Coupling between Silicon Nanowire and Optical Fiber.pdf: 232805 bytes, checksum: 0bd17756b8a703bf8337dd25bbddaca3 (MD5)

Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm(2), differential resistance of 76 Omega, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 mu m at room temperature (RT). L-I-V characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent L-I characteristics and modulation response of the dielectric-free VCSEL are also presented.

Donor defect in P-diffused bulk ZnO single crystal

A high concentration of shallow donor defect is formed in P-diffused ZnO single crystals. X-ray photoelectron spectroscopy analysis indicates that P atom occupy different lattice site at different diffusion temperature. Nature of the donor defect has been discussed.

Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. Based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. Our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. There is no length limit for the nano-gap electrode and the nano-channel. The method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.

Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T01:33:41Z No. of bitstreams: 1 ApplPhysLett_96_213505.pdf: 1153920 bytes, checksum: 69931d8deb797813dd478b5dd0e292c0 (MD5)

Range-Gated Laser Stroboscopic Imaging for Night Remote Surveillance

For night remote surveillance, we present a method, the range-gated laser stroboscopic imaging(RGLSI), which uses a new kind of time delay integration mode to integrate target signals so that night remote surveillance can be realized by a low-energy illuminated laser. The time delay integration in this method has no influence on the video frame rate. Compared with the traditional range-gated laser imaging, RGLSI can reduce scintillation and target speckle effects and significantly improve the image signal-to-noise ratio analyzed. Even under low light level and low visibility conditions, the RGLSI system can effectively work. In a preliminary experiment, we have detected and recognized a railway bridge one kilometer away under a visibility of six kilometers, when the effective illuminated energy is 29.5 mu J.

Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism

High quality silicon nanowires (SiNWs) were grown directly from n-(111) silicon single crystal substrate by using Au film as a metallic catalyst. The diameter and length of the formed nanowires are 30-60 nm and from several micrometers to sereral tens of micrometers, respectively. The effects of Au film thickness, annealing temperature, growth time and N-2 gas flow rate on the formation of the nanowires were experimentally investigated. The results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. The formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism.

Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

The self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QD VCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.

Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method

Silicon nanowires (SiNWs) were grown directly from n-(111) single-crystal silicon (c-Si) substrate based on a solid-liquid-solid mechanism, and Au film was used as a metallic catalyst. The room temperature photoluminescence properties of SiNWs were observed by an Xe lamp with an exciting wavelength of 350 nm. The results show that the SiNWs exhibit a strongly blue luminescent band in the wavelength range 400-480 nm at an emission peak position of 420 nm. The luminescent mechanism of SiNWs indicates that the blue luminescence is attributed to the oxygen-related defects, which are in SiOx amorphous oxide shells around the crystalline core of SiNWs.

Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 +/- A 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 +/- A 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.