Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. Based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. Our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. There is no length limit for the nano-gap electrode and the nano-channel. The method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-05T08:06:42Z No. of bitstreams: 1 49.pdf: 674942 bytes, checksum: c387362417d1bd25fde3a6f1804b9e91 (MD5)

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-05T08:06:42Z No. of bitstreams: 1 49.pdf: 674942 bytes, checksum: c387362417d1bd25fde3a6f1804b9e91 (MD5)

National High-tech Research and Development Program (863) 2008AA031402；National Natural Science Foundation of China 60606024

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National High-tech Research and Development Program (863) 2008AA031402；National Natural Science Foundation of China 60606024